SUMMARY
The forum discussion centers on the observation of voltage spikes in a CMOS inverter simulation conducted in Cadence. Users identified that the spikes occur during transitions from low to high and high to low output states, primarily due to parasitic capacitance, particularly gate-drain capacitance (Cgd) in the MOS transistors. The spikes are exacerbated by low rise and fall times of the input pulse signal and can be influenced by the choice of load capacitance and the threshold voltages of the MOSFETs. Recommendations include adjusting the rise time of the gate voltage and using appropriate load resistances to mitigate the observed spikes.
PREREQUISITES
- Understanding of CMOS inverter operation
- Familiarity with Cadence simulation tools
- Knowledge of parasitic capacitance effects in MOSFETs
- Basic principles of voltage and current transitions in digital circuits
NEXT STEPS
- Investigate the effects of parasitic capacitance in CMOS circuits
- Learn about optimizing rise and fall times in digital signal inputs
- Explore the impact of load capacitance on inverter performance
- Review SPICE modeling techniques for analyzing MOSFET parameters
USEFUL FOR
Electrical engineers, circuit designers, and students involved in digital circuit design and simulation, particularly those working with CMOS technology and Cadence tools.
