Strong static magnetic field influences on IC

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SUMMARY

The discussion centers on the influence of strong static magnetic fields (7 to 12 Tesla) on bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). Participants highlight that transistor parameters significantly change with varying azimuth angles due to the Hall effect. Additionally, the magnetic components within these devices, such as inductors and transformers, may experience saturation, potentially leading to device failure. Several relevant research papers are cited, although many are behind paywalls.

PREREQUISITES
  • Understanding of BJT and MOSFET operation principles
  • Familiarity with the Hall effect in semiconductors
  • Knowledge of magnetic field effects on electronic components
  • Access to scientific research databases for academic papers
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  • Research the "Magnetothermal effect in semiconductors in strong magnetic fields"
  • Explore the implications of "piezoresistance and magnetoresistance" in semiconductors
  • Investigate the effects of strong magnetic fields on "inductors and transformers"
  • Review experimental results on "transistor performance under varying magnetic field directions"
USEFUL FOR

Electrical engineers, semiconductor researchers, and anyone involved in the design and analysis of electronic devices operating in strong magnetic fields.

tendo
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Does anyone have any papers or materials on how strong static magnetic field (7 to 12 Tesla) influence BJT and MOSFETS?
I didn't find many people doing research on this. All I find is some experiment results. It seems transistor parameters change a lot with different azimuth angle due to Hall effect.
I really would like to know more about how it influences amplifiers and mixers.
Thank you.
 
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Hi there
welcome to PF :smile:

There's lots of papers online eg
"Magnetothermal effect in semiconductors in strong magnetic fields"
http://www.sciencedirect.com/science/article/pii/0022369776901773

The effect of a strong magnetic field on the impurity photoionization in semiconductors
http://onlinelibrary.wiley.com/doi/10.1002/pssb.2221970118/citedby

The effect of stress and strong magnetic fields on the shallow impurities in semiconductors and the piezoresistance and magnetoresistance for hopping conduction
http://www.researchgate.net/publication/249049827_The_effect_of_stress_and_strong_magnetic_fields_on_the_shallow_impurities_in_semiconductors_and_the_piezoresistance_and_magnetoresistance_for_hopping_conduction

unfortunately that and most others are behind pay per view/membership sites
so plenty of info out there, its just a matter of getting access to it :)

Dave
 
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tendo said:
Does anyone have any papers or materials on how strong static magnetic field (7 to 12 Tesla) influence BJT and MOSFETS?
I didn't find many people doing research on this. All I find is some experiment results. It seems transistor parameters change a lot with different azimuth angle due to Hall effect.
I really would like to know more about how it influences amplifiers and mixers.
Thank you.

Welcome to the PF.

In addition to the effects on the semiconductors, the magnetic components in those devices you mention (inductors, transformers, etc.) will be affected too. Those field levels will likely saturate all magnetic components on the device, which will probably keep the devices from working.
 
Putting things with ferromagnetic cores in such a strong field sounds like a stupid idea anyway.

Unfortunately, influences of magnetic fields depend on the magnetic field direction and transistor design.
 

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