What are the Basics of Transistor Amplification?

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SUMMARY

The discussion centers on the fundamental principles of transistor amplification, specifically focusing on Bipolar Junction Transistors (BJTs). Participants clarify that a BJT operates as a current-controlled current amplifier, where the collector current (Ic) is influenced by the base current (Ib) in a common emitter configuration. The amplification occurs because a small base current can control a larger collector current, despite some current loss due to recombination. Understanding semiconductor physics, including concepts like depletion regions and junctions, is essential for grasping the amplification process.

PREREQUISITES
  • Understanding of Bipolar Junction Transistors (BJTs)
  • Knowledge of semiconductor physics, including depletion regions
  • Familiarity with current and voltage relationships in electronic circuits
  • Basic concepts of minority carriers and pn junctions
NEXT STEPS
  • Study the current-voltage characteristics of BJTs in common emitter configuration
  • Learn about the role of V_BE in controlling transistor operation
  • Explore semiconductor physics texts, such as Sze's Semiconductor Physics
  • Investigate the relationship between base current and collector current in BJTs
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Electronics students, electrical engineers, and anyone interested in understanding the principles of transistor operation and amplification.

davidc95
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I know this question is very vague, but my textbook, amongst various websites/videos, tend to discuss what a transistor does (amplify/control current) rather than how it does it. I know current IC and IE (collector and emitter current) are controlled/proportional to a base current that flows through the base of a transistor, but what is most confusing is that my textbook says a transistor amplifies current, how is this so? From what it seems to me, a transistor looks like a gateway that splits, in one way or another, emitter current into both base current and collector current, but isn't that to say that collector current is the deduction of base current from emitter current, rather than an amplification?

Any help would be appreciated.
 
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Changing the EB potential V_BE reduces the potential barrier across the EB diode junction so that current flows. The charges in the B region are minority carriers that, if B is thin enough, diffuse to the BC junction before recombination. The back-bias potential V_BC then sweeps the charges to the collector contact. To understand it fully you should understand band gaps, valence bands, minority carriers, pn junctions, etc. Take a look at any standard text, like Sze's Semiconductor Physics.

You are on the right track with your current "deduction." The claim that a transistor amplifies current arises from the fact that only a small fraction (called alpha) of the injected charges across the EB diode junction are lost to recombination, so the base current needed to make up for recombination is small compared to the EC current. Although it is actually a potential that controls the current if you look at the band diagram, from outside the device it appears that a small base current "controls" the large collector current.

EDIT: Here's an online text
http://ecee.colorado.edu/~bart/book/book/contents.htm
 
Last edited:
I=V/R
2 circuits here, base-emitter and emitter-collector(more voltage supply than base-emitter).
The resistance in the emitter-collector can be controlled by the amount of current passing thru base-emitter.
Less resistance in emitter-collector means more current.
Thus any changes in base-emitter current follow by bigger changes in emitter-collector current due to more voltage.
 
azizlwl, your view of transistor action is too simplistic to address the OP's question.
 
OK the BJT we are talking about here is basically a current controlled current amplifier. What this means is that the collector current depends on the base current(when dealing with the CE configuration). The actual 'amplification' of the current will be easier to understand if you are familiar with the basics of semiconductor physics, such as depletion regions and junctions.
When the emitter-base junction is forward biased sufficiently, electrons are able to pass through the depletion region, as it is now narrowed down. Some of these electrons combine with the holes in the base region, but most of them go on to be 'collected' by the collector. If you go on to analyse the voltage and current relationships BJT, you will find that the base current has been amplified, and this is the collector current.
Hope this helps.
 
Ok, I think this has clarified the things I needed to know.
Thanks for the help everyone
 
Vyse007,

OK the BJT we are talking about here is basically a current controlled current amplifier. What this means is that the collector current depends on the base current(when dealing with the CE configuration). The actual 'amplification' of the current will be easier to understand if you are familiar with the basics of semiconductor physics, such as depletion regions and junctions.
When the emitter-base junction is forward biased sufficiently, electrons are able to pass through the depletion region, as it is now narrowed down. Some of these electrons combine with the holes in the base region, but most of them go on to be 'collected' by the collector. If you go on to analyse the voltage and current

I beg to differ. A BJT is a voltage controlled current amplifier. It appears that Ic is being controlled by Ib, but that is an illusion. Ib is an indication of what Ic is, but Vbe controls both Ib and Ic in a exponential relationship.

Ratch
 

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