What are the limitations of using real transistors to build an ideal op-amp?

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Discussion Overview

The discussion revolves around the limitations of using real transistors to construct an ideal operational amplifier (op-amp). Participants explore the characteristics of transistors and how these characteristics impact the performance of op-amps, delving into both theoretical and practical aspects.

Discussion Character

  • Exploratory
  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • One participant questions the characteristics and limitations of transistors in the context of building an ideal op-amp.
  • Another participant emphasizes the need for specific questions and prior reading to facilitate a more productive discussion.
  • A participant expresses that their inquiries are thought experiments aimed at understanding the connection between individual transistor physics and integrated circuit performance.
  • Recommendations for reading materials are provided, including introductory articles on op-amps and specific analyses of the LM741 op-amp.
  • One participant argues that understanding the inner workings of transistors is not necessary, stating that the characteristics of real transistors are fundamentally opposed to those of an ideal op-amp.
  • The characteristics of an ideal op-amp are listed as infinite gain, infinite bandwidth, infinite input impedance, zero output impedance, and no offsets, while real transistors are described as having finite gain, finite bandwidth, finite input impedance, nonzero output impedance, and mismatched characteristics.

Areas of Agreement / Disagreement

Participants express differing views on the necessity of understanding the inner workings of transistors for this discussion. While some suggest that deeper knowledge is beneficial, others contend that the inherent limitations of real transistors make the construction of an ideal op-amp impossible, indicating a lack of consensus on the approach to the topic.

Contextual Notes

Some participants note that discussions often focus on op-amps as a unit without delving into the transistor level, which may limit understanding of the underlying physics. There is also an acknowledgment of the need for specific questions to guide the discussion effectively.

ZeroFunGame
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What are the transistor characteristics and limitations from building an ideal op-amp?
What are the transistor characteristics and limitations from building an ideal op-amp?
 
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ZeroFunGame said:
Summary:: What are the transistor characteristics and limitations from building an ideal op-amp?

What are the transistor characteristics and limitations from building an ideal op-amp?
Is this for schoolwork/self-study? Or another thought experiment like your recent CMOS current thread?

In either case, you need to show more effort before we can try to help you with questions like this. What reading have you been doing about this question? Can you post links to that reading, and ask *specific* questions about the parts you are not able to understand? Thanks.
 
All my questions are thought experiments for personal understanding. As one goes to higher levels of abstraction, sometimes the connection to the individual components and fundamentals are lost on me. On the current CMOS thread, I'm going through the tutorials to learn to read the circuit in order to answer your question regarding what happens when Ion is close to the leakage (thanks for the great link btw, https://www.tutorialspoint.com/vlsi_design).

This will take some time to go through, but I'll have an answer once I feel comfortable to address your question. On this particular question, it's taking some fundamental circuit, and trying to understand how the individual transistor physics play into IC performance. Most readings I've done discusses the opamp as a unit, without diving into the transistor level. Any recommended reading on how to understand the inner workings would also be much appreciated.
 
ZeroFunGame said:
Any recommended reading on how to understand the inner workings would also be much appreciated.
You can start with the introductory article on opamps at Wikipedia:

https://en.wikipedia.org/wiki/Operational_amplifier

The LM741 is a classic basic bipolar opamp, and it's good to understand it in detail before going on to more sophisticated FET-based opamps, IMO:

http://www.physics.utah.edu/~jui/3620-6620/y2009m02d03/741.html

http://pallen.ece.gatech.edu/Academic/ECE_6412/Spring_2003/L210-DCAnalysisof741-2UP.pdf

http://pallen.ece.gatech.edu/Academic/ECE_6412/Spring_2003/L220-ACAnalysisof741-2UP.pdf
 
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I don't think knowledge of the inner workings are necessary here. Real transistor characteristics are the logical inverse of the characteristics of an ideal opamp.

An ideal opamp has: 1) infinite gain, 2) infinite bandwidth, 3) infinite input impedance, 4) zero output impedance, 5) no offsets

A real transistor has: 1) finite gain, 2) finite bandwidth, 3) finite input impedance, 4) nonzero output impedance, 5) never perfectly matches other transistors

It should be clear why one cannot construct an ideal opamp from real transistors.
 
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