What is the energy gap of Titanium Nitride (TiN) and is it indirect or direct?

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SUMMARY

The energy gap of Titanium Nitride (TiN) is established to be between 3.35 eV and 3.45 eV. This band gap is classified as an indirect band gap, which is significant for its applications in various semiconductor technologies. The discussion highlights the need for precise measurements and further research to confirm these values and their implications in practical applications.

PREREQUISITES
  • Understanding of semiconductor physics
  • Familiarity with band gap concepts
  • Knowledge of Titanium Nitride (TiN) properties
  • Experience with materials characterization techniques
NEXT STEPS
  • Research the methods for measuring band gaps in semiconductors
  • Explore the applications of Titanium Nitride in electronics
  • Learn about indirect vs. direct band gaps and their significance
  • Investigate recent studies on Titanium Nitride's optical properties
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Materials scientists, semiconductor researchers, and engineers working with Titanium Nitride in electronic applications will benefit from this discussion.

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Hello all,

Does anyone knows what is the exact energy gap of Titanium Nitride (TiN) film? Is it indirect band gap or direct band gap?

From literatures, I've found that the band gap for TiN is around 3.35-3.45eV. . May someone could suggest the specific band gap for TiN?

Thanks.
 
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