What is the significance of normalized data in NMOSFET parameter extraction?

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SUMMARY

The significance of normalized data in NMOSFET parameter extraction is crucial for accurate analysis. When the Id data is normalized to a width (w) of 1μmeter, it indicates that the current must be scaled for different widths, requiring the un-normalization of Ids by multiplying by the actual width (w=10μmeter). Additionally, low-field mobility (μ0) is not constant across all NMOSFETs; the default value of 670 cm²/Vsec from the BSIM guide may differ from the extracted value of 200 cm²/Vsec, highlighting the variability in device characteristics.

PREREQUISITES
  • Understanding of NMOSFET operation and parameter extraction
  • Familiarity with the BSIM model for MOSFETs
  • Knowledge of electrical engineering concepts such as mobility and current normalization
  • Proficiency in using measurement tools for semiconductor devices
NEXT STEPS
  • Research the process of NMOSFET parameter extraction and normalization techniques
  • Study the BSIM model specifications and variations in mobility values
  • Learn about the impact of device dimensions on Id and mobility in MOSFETs
  • Explore measurement methodologies for accurate NMOSFET characterization
USEFUL FOR

Electrical engineers, semiconductor researchers, and students involved in NMOSFET design and analysis will benefit from this discussion.

Aseth
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Hey! I'm doing a lab assignment and need some guidance.

i have measurement with L=1μmeter and w=10μmeter, but the id data is normalized to w=1μmeter, what does it mean?

do I need to get Ids "un-normalized" for extraction, like Ids*1e-6= new Ids


the second question is about low-field mobility, does the low-field mobility μ0 equal for all NMOSFETs? the BSIM guide Iam using have default value is 670 cm^2/Vsec for NMOSFET. but the extracted value is like 200cm^2/Vsec, I'm confused.

I don't know if this is the right sub-forum for posting those questions, please moderators change it to appropriate sub-forum if needed.

Thanks in advance
 
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I'm sorry you are not finding help at the moment. Is there any additional information you can share with us?
 
The general MOSFET equation is Id = mu Cox W/L ((Vgs-Vth) Vds - Vds^2/2). This is the W/L they are referring to.
 

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