Why Are Electrons Not Attracted to Holes in a MOSFET Without Gate Voltage?

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Homework Help Overview

The discussion revolves around the operation of a MOSFET, particularly focusing on the behavior of electrons and holes in the absence of gate voltage. The original poster expresses confusion about why electrons in n-doped regions are not attracted to holes in the p-doped substrate when no voltage is applied.

Discussion Character

  • Conceptual clarification, Assumption checking

Approaches and Questions Raised

  • The original poster attempts to understand the interaction between electrons in n-doped regions and holes in the p-doped substrate without gate voltage. Some participants question the neutrality of the p-substrate and how it affects electron attraction. Others inquire about the definition of threshold voltage in this context.

Discussion Status

Participants are exploring the fundamental concepts of charge neutrality in the p-substrate and the conditions under which an n-type channel forms. Some guidance has been provided regarding the neutrality of the p-substrate and its implications for electron attraction.

Contextual Notes

There is a reference to the threshold voltage and its significance, but the specifics of its definition remain under discussion. The original poster also mentions a figure from their textbook that may aid in understanding the MOSFET structure.

Denver Dang
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Homework Statement


I currently reading about transistors in a solid state course. And the transistor is a MOFSET, which I have to describe. I can't really find a nice figure of the one I have in my book, so I will just try to explain my confusion.

It says that you make a MOFSET by having a p-doped substrate in which you have two n-doped regions (source and drain), which are connected by an oxide layer, which again is connected to a metal electrode (gate).

Now, when you "open" the gate, you repel the holes underneath the oxide layer, making "room" for electrons and attracting them, right ? And first when you apply a voltage, there is enough energy to make the electrons move from source to drain, or maybe I have misunderstood something ?

So, my main question is: Since the p-substrate has a lot of holes, why are the electrons from the two n-type regions not attracted to them, even when there is no gate or voltage applied ? Why do they first start to be attracted when the gate is opened, and making the oxide layer positive ?

Don't know if I have explained it in a good way, but I hope you understand.

Homework Equations



EDIT:
I actually have the figure from my book right here:

http://i.imgur.com/Qda9msK.png

The Attempt at a Solution

 
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Denver Dang said:
So, my main question is: Since the p-substrate has a lot of holes, why are the electrons from the two n-type regions not attracted to them, even when there is no gate or voltage applied ?

The positive charge of the holes in the p-substrate is balanced by the negative charge of the acceptor atoms in the p-substrate. So the p-substrate is charge-neutral and there is no net charge to attract electrons from the n-type source and drain. It is only when a positive voltage (larger than the threshold voltage) is applied to the gate that an n-type channel forms between the source and drain. Does this answer your question?
 
Indeed it did :)

Although, the threshold voltage, how is that defined ?
 

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