Why is the band gap in alloys such as GaAs less?

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SUMMARY

The discussion clarifies that the band gap in compound semiconductors like Gallium Arsenide (GaAs) is often greater than that in pure crystals such as Silicon and Germanium. Specifically, GaAs has a band gap of 1.43 eV, which surpasses Silicon's band gap of 1.14 eV. Additionally, Gallium Nitride (GaN) exhibits an even larger band gap of 3.4 eV. The assertion that pure crystals consistently have larger band gaps than compound semiconductors is incorrect.

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TL;DR
Why is band gap in alloys such as GaAs less in comparison with intrinsic semiconductor crystals, such as Silicon?
In pure crystals,such as,in silicon and germanium,the band gap is more than that in compound semiconductors,such as,GaAs.Why is that so.
 
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This is simply wrong. Try looking at the table of band gaps at this Wikipedia page. Silicon is 1.14 eV. GaAs is 1.43 eV. GaN is 3.4 eV. Other compound semiconductors have band gaps less than silicon.
 
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