The p and n type regions are neutral, but the electrons and holes are free to move in the whole crystal, like the conduction electrons in a metal. The pure (intrinsic) semiconductor has only few free charge carriers, as the forbidden band, the gap between valence and conduction band is broader than the thermal energy. But adding impurity atoms which have one electron more than the host atoms (for example phosphorus in silicon) these extra electrons are very loosely connected to their atoms and the thermal energy (kT) is enough to remove them from the atom. We say that the impurities make a donor level just under the conduction band. Similarly, atoms less than one electron than silicon capture an electron from an other atom, so the "hole", the place of the missing electron moves as free positive charge carrier in the crystal. The number of doping atoms can be about 1015-1020 atoms/cm3, so they are not so many with respect to the silicon atoms.
In the depletion region, the free carriers move to the other side of the junction by diffusion, electrons to the p part and holes to the n part, leaving the ions alone. The depletion region is free from free carriers, but the concentration of the ions is the same as in the bulk of the semiconductor.
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