- #1
grandmessage
- 7
- 0
Hello Everyone,
We know how a schottky barrier forms with a depletion region of width 'W' and contact potential
'qV' as shown in below figure,
http://homepage.ntlworld.com/beehive77/images/ntypeschottky.jpg
The depletion width 'W' depends mainly on doping concentration
of the semi-conductor and contact potential, for example for a given doping concentration the width is 1μm.
Now question is what happens to the contact potential if i took a semiconductor of thickness or width only 0.1μm, without changing the doping concentration.
Any answers would be greatly appreciated!
Thanks..
We know how a schottky barrier forms with a depletion region of width 'W' and contact potential
'qV' as shown in below figure,
http://homepage.ntlworld.com/beehive77/images/ntypeschottky.jpg
The depletion width 'W' depends mainly on doping concentration
of the semi-conductor and contact potential, for example for a given doping concentration the width is 1μm.
Now question is what happens to the contact potential if i took a semiconductor of thickness or width only 0.1μm, without changing the doping concentration.
Any answers would be greatly appreciated!
Thanks..