- #1
Shockblast
- 2
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Hello. I want to build an electron accelerator grid in vacuum. The grid, which has the purpose of accelerating or decelerating electrons produced by a nearby filament has to be electrically charged at +500V or -500V. The switching frequency between the voltages +500V to -500V has to be approximately 10 MHz.
I have developed an idea of doing this by using two MOSFET transistors linked together (one is pMOS and the other one nMOS). The gates of the two MOSFETs are linked to a driver which will command the switching.
The problem I have with this is that I do not think the MOSFETs will have an adequate slew-rate to operate the switching at a 10 MHz frequency. Another thing I do not yet know is what voltage must I have between the gate-source of the transistors in order to function properly?
If anyone has a better solution than the one I posted here (which is not a very good one, as you can see), please inform me! If you think my solution is good, but requires some polishing please tell me what improvements I need.
Thank you all very much, in advance!
I have developed an idea of doing this by using two MOSFET transistors linked together (one is pMOS and the other one nMOS). The gates of the two MOSFETs are linked to a driver which will command the switching.
The problem I have with this is that I do not think the MOSFETs will have an adequate slew-rate to operate the switching at a 10 MHz frequency. Another thing I do not yet know is what voltage must I have between the gate-source of the transistors in order to function properly?
If anyone has a better solution than the one I posted here (which is not a very good one, as you can see), please inform me! If you think my solution is good, but requires some polishing please tell me what improvements I need.
Thank you all very much, in advance!