- #1
oddiseas
- 73
- 0
If we have two semiconducting materials say silicon and germanium and in this specific case silicon has a very large donor area energy say 25Mev and a very small energy gap, say 1.1Mev and germanium has a smaller energy gap then silicon, 0.6Mev and a donor energy of 2Mev.
I amtrying to figure out the logic of this.Does having a larger donor area energy mean that it is harder for the electrons to move into the conductive band?
And how would i figure out which is more likely to intrinsic and extrinsic carriers in the conduction band at room temperature?
and how would this change with increasing temperature?
I amtrying to figure out the logic of this.Does having a larger donor area energy mean that it is harder for the electrons to move into the conductive band?
And how would i figure out which is more likely to intrinsic and extrinsic carriers in the conduction band at room temperature?
and how would this change with increasing temperature?