- #1
kpraneethin00
- 2
- 0
I have three doubts in BJT:
1). in BJT Ie=Ib+Ic ; Ie-emitter current; Ib-base current; Ic-collector current
then i find in many circuits, collector current is given to load, if the emitter current is greater than the collector current, we can connect the emitter terminal to the load, to get more current...
2). why the collector region is large in BJT
3). why the collector region is moderately doped when compared to highly doped emitter
Please help me in this
1). in BJT Ie=Ib+Ic ; Ie-emitter current; Ib-base current; Ic-collector current
then i find in many circuits, collector current is given to load, if the emitter current is greater than the collector current, we can connect the emitter terminal to the load, to get more current...
2). why the collector region is large in BJT
3). why the collector region is moderately doped when compared to highly doped emitter
Please help me in this