- #1
Niles
- 1,866
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Hi all
It can be shown that the product of the hole and electron concentration is constant at a given temperature in a semiconductor, as long as the Fermi level is in the ~middle of the gab.
When we dope semiconductors, do we use the above argument? I.e., does doping work because of this argument?
It can be shown that the product of the hole and electron concentration is constant at a given temperature in a semiconductor, as long as the Fermi level is in the ~middle of the gab.
When we dope semiconductors, do we use the above argument? I.e., does doping work because of this argument?