Difference between Intrinsic & Extrinsic Behaviour of a Semiconductor

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SUMMARY

The discussion clarifies the distinction between intrinsic and extrinsic behavior in semiconductors, particularly focusing on Silicon. Intrinsic behavior occurs when the Fermi level is positioned midway between the valence and conduction bands, while extrinsic behavior is characterized by the Fermi level being closer to either band, influenced by donor and acceptor concentrations. The conversation highlights the challenge of determining the temperature at which Silicon reverts to intrinsic behavior, given the intrinsic carrier concentration and energy gap, without a direct equation for temperature variation.

PREREQUISITES
  • Understanding of semiconductor physics, specifically Fermi levels
  • Knowledge of donor and acceptor concentrations in semiconductors
  • Familiarity with intrinsic and extrinsic carrier concentrations
  • Basic grasp of temperature dependence of semiconductor properties
NEXT STEPS
  • Research the temperature dependence of intrinsic carrier concentration in Silicon
  • Study the mathematical models for chemical potential in semiconductors
  • Learn about the role of energy gaps in semiconductor behavior
  • Explore the effects of temperature on Fermi level positioning in semiconductors
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Students and professionals in semiconductor physics, electrical engineers, and researchers focusing on material science and semiconductor applications.

Claude Bile
Science Advisor
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1. What is the difference between extrinsic and intrinsic behaviour in a semiconductor? How can you determine what temperature a semiconductor material such as Silicon will revert to intrinsic behaviour, given the donor, intrinsic carrier concentration and the energy gap?

- I am thinking that intrinsic/extrinsic behaviour is related to the Fermi level and the donor and acceptor concentrations at a temperature, T. Intrinsic behaviour has the Fermi level close to midway between the valence and conduction bands, with nearly equal concentrations of donor and acceptor ions. Extrinsic behaviour has the Fermi level close to the conduction band (or valence band). I am looking for confirmation as to whether this is correct, and if not, where I am going wrong.

- I do not have an equation that gives a direct answer to this question. The best I have managed is gaining approximate expressions for the chemical potential for both intrinsic and extrinsic behaviour and showing at which temperature they are both valid. My main difficulty is that we are only given the intrinsic carrier concentration at room temperature and are not told how it varies with temperature. Is there an equation that gives this also, with only the information given above as stated in the 1st paragraph?
 
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