Jul25-13, 02:58 PM
I have expermentally measured the resistivity, Hall mobility concentration of a p-type germanium sample at the range of 300K-700K. The task I want to accomplish is, given the fact that I know NA= 4.5E17 and acceptor is boron.
- How can I calculate the expected transition temperature from extrinsic to intrinsic?
- How can I assume the expected resistivity, mobility and concentration values so I can compare them with the experimental values? Which scattering mechanisms will dominate?
Thanks in advance.
|Register to reply|
|Intrinsic and extrinsic silicon semiconductors||Advanced Physics Homework||1|
|Extrinsic intrinsic||Differential Geometry||1|
|intrinsic extrinsic||Differential Geometry||5|
|Extrinsic and Intrinsic Curvature||Differential Geometry||8|
|Extrinsic/Intrinsic curvature||Differential Geometry||6|