Determine the intensities of GaAs crystal planes

In summary, the conversation discusses the use of equations to find intensities at different planes in GaAs crystal structures. The equations involve factors such as atomic scattering and the Lorentz factor, but there is a potential issue with generating peaks at certain planes that are deemed to have zero intensity in the literature. The speaker seeks clarification on the accuracy of the equations for an FCC crystal structure.
  • #1
ralden
85
0
GaAs crystal structures have basis atoms:

Ga: (0 0 0), (0.5 0.5 0),(0.5 0 0.5),(0 0.5 0.5)
As: (0.25 0.25 0.25),(0.75 0.75 0.25),(0.75 0.25 0.75),(0.25 0.75 0.75)

i'm trying to find intensities at all of its plane, using this equation:

I = (F^2)*m*Lf (m= multiplicity, Lf=lorentz factor)

where F = f*cos(2*pi*(hx +ky +zl)), (f =atomic scattering factor)

or you could used:the simplest form:
F^2 = 16(fGa^2 + fAs^2 + 2f*Ga*fAs*(cos(90*(h+ k +)l)) )

but using this equation you would have peaks at 001 plane and other planes that base on literature would generate a zero Intensity,

so my problem was, are my equations or the F^2 simplest form are correct?
 
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  • #2
GaAs is FCC, so (100) peaks are forbidden.

With such structure factor formulae, it is always assumed that the peak exists to begin with. Otherwise you could calculate a non-zero structure factor even for non-integer values of hkl - which clearly do not give a Bragg peak.
 

1. What is a GaAs crystal?

A GaAs crystal is a type of semiconductor material that is made up of Gallium (Ga) and Arsenic (As) atoms arranged in a crystalline structure. It is commonly used in electronic devices such as solar cells, LEDs, and transistors.

2. Why is it important to determine the intensities of GaAs crystal planes?

Knowing the intensities of GaAs crystal planes is important for understanding the physical and chemical properties of the material. It can also help in the design and optimization of electronic devices that use GaAs crystals.

3. How are the intensities of GaAs crystal planes determined?

The intensities of GaAs crystal planes are determined using techniques such as X-ray diffraction or electron diffraction. These methods involve analyzing the diffraction patterns produced when a beam of X-rays or electrons is directed at the crystal.

4. What factors can affect the intensities of GaAs crystal planes?

The intensities of GaAs crystal planes can be affected by various factors such as the orientation of the crystal, the angle of incidence of the X-ray or electron beam, and the crystal's atomic structure. Defects or impurities in the crystal can also affect the intensities.

5. How are the intensities of GaAs crystal planes used in practical applications?

The intensities of GaAs crystal planes are used in practical applications such as material characterization, crystal growth optimization, and the development of new electronic devices. They can also be used to determine the lattice parameters and crystal structure of GaAs crystals.

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