A Schottky barrier is a type of metal-semiconductor junction that forms a rectifying contact between the metal and semiconductor materials. It is characterized by a potential barrier at the interface that allows for the flow of current in one direction while hindering it in the opposite direction.
Discrepancy in using Schottky barriers can be caused by a variety of factors, including variations in the metal and semiconductor materials, surface properties, and fabrication processes. These can lead to differences in the height and width of the potential barrier, as well as variations in the electrical properties of the junction.
The presence of discrepency in Schottky barriers can significantly impact the performance of devices, particularly in terms of their electrical characteristics. Variations in the potential barrier can lead to changes in the device's forward and reverse current-voltage curves, leakage current, and breakdown voltage. This can result in reduced device efficiency and reliability.
There are several techniques that can be employed to minimize the discrepency in Schottky barriers, including improving the quality of the metal and semiconductor materials, utilizing surface treatments to reduce interface defects, and optimizing the fabrication processes to ensure consistency in the device structure and properties.
While it may not be possible to completely eliminate discrepency in Schottky barriers, ongoing research and advancements in materials and fabrication techniques are helping to reduce the variation and improve the overall performance of devices. Additionally, the use of other types of junctions, such as p-n junctions, may offer alternative solutions to address discrepency issues.