DoS in anisotropic conduction band

In summary, the conversation discusses the concept of band dispersion and its relationship to the density of states. Two methods are presented for calculating the density of states, with the second method involving an integral over a constant energy surface. However, the conversation ends with uncertainty about how to solve this integral in spherical coordinates.
  • #1
cscott
782
1

Homework Statement



have band dispersion

[tex]\epsilon = \epsilon_c + \frac{h^2 k_x^2}{2 m_x} + \frac{h^2 k_y^2}{2 m_y} + \frac{h^2 k_z^2}{2 m_z}[/tex]

Show density of states is

[tex]g(\epsilon) = \frac{m^{3/2}}{\pi^2 h^2} \sqrt{2|\epsilon - \epsilon_c|}[/tex]

Homework Equations



[tex]2 \frac{d\vec{k}}{(2\pi)^3} = g(\epsilon) d\epsilon[/tex]

or

[tex]g(\epsilon) = \frac{1}{4 \pi^3} = \int \frac{|d\vec{S}|}{|(grad)_k \epsilon|}[/tex]
over a constant energy surface where the gradient is always perpendicular to the surface.

The Attempt at a Solution



For the first method I don't know how to solve for total magnitude of k so I can't procede.

Second method I get what appears to be a "not nice" integral, where

[tex]|(grad)_k \epsilon| = \sqrt{ \frac{h^4 k_x^2}{m_x^2} + \frac{h^4 k_y^2}{m_y^2} + \frac{h^4 k_z^2}{m_z^2}}[/tex]

I don't see how to do this nicely in spherical coords over the Fermi surface.
 
Last edited:
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  • #2
You can rewrite [tex]|\nabla_k \epsilon|[/tex] in terms of [tex]\epsilon-\epsilon_c[/tex]. Then remember that the integral that you have to do is over a constant energy surface.
 

1. What is a DoS in anisotropic conduction band?

DoS stands for Density of States, which refers to the number of available energy states at each energy level in a material. Anisotropic conduction band refers to a type of material where the conduction band (energy band where electrons can move freely) has different properties in different directions. Therefore, DoS in anisotropic conduction band refers to the distribution of energy states in a material with anisotropic conduction band.

2. How does DoS in anisotropic conduction band affect material properties?

The distribution of energy states in a material with anisotropic conduction band can affect its electrical, thermal, and optical properties. This is because the number of available energy states determines the number of electrons that can move freely, thus affecting the material's conductivity and other properties.

3. How is DoS in anisotropic conduction band measured?

DoS in anisotropic conduction band can be measured using various techniques such as spectroscopy, tunneling microscopy, and photoemission spectroscopy. These techniques involve measuring the energy levels and the number of electrons at each level to determine the distribution of energy states.

4. What factors can influence DoS in anisotropic conduction band?

The distribution of energy states in a material with anisotropic conduction band can be influenced by factors such as crystal structure, temperature, and external electric or magnetic fields. These factors can change the number of energy states and their distribution, thus altering the material's properties.

5. What are the applications of understanding DoS in anisotropic conduction band?

Understanding DoS in anisotropic conduction band is crucial in the development of new materials for various applications. For example, materials with high DoS in certain energy levels can be used for efficient energy harvesting or as efficient conductors, while materials with low DoS can be used for insulating purposes. Additionally, understanding DoS in anisotropic conduction band can also aid in the design and optimization of electronic and optoelectronic devices.

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