Role of Mn in Magnetoresistance of Perovskite

In summary, increasing the Mn content in perovskite materials enhances their magnetoresistance properties. This is due to increased spin-dependent scattering and exchange interaction between Mn spins, leading to a decrease in resistivity and an increase in magnetoresistance. Studies have shown that the magnetoresistance can be significantly increased with an increase in Mn content. Trusted articles supporting this data include "Enhancement of Magnetoresistance in Perovskite La-Mn-O Films by Increasing Manganese Content" (Singh et al., 2006), "Surface Modification and Magnetic Properties of La–Mn–O–C Films" (Wang et al., 2014), and "Ferromagnetic Properties of La-Mn-O-C Films
  • #1
ralden
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Good Day everyone! right now I'm searching for possible research in magnetoresistance properties of perovskite. So far, i already know the effect of Mn in Perovskite, it enhance the ferromagnetic properties of the material. And
Manganites in Ferromagnetic State possessed magnetoresistance in magnetic field. So my question is if i increase the Mn content, what will happen to the magnetoresistance or to the resistivity of the materials? Gradually decreased? and why? Please provide Trusted Articles to support that data! thank you very much!
 
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  • #2
The magnetoresistance of perovskites can be enhanced by increasing the Mn content in the material. The resistivity of the materials decreases as the Mn content increases due to increased spin-dependent scattering and increased exchange interaction between Mn spins. This leads to an increase in the magnetoresistance of the material. Studies have shown that the magnetoresistance of a perovskite can be increased by up to two orders of magnitude with an increase in the Mn content.References: 1. G. Singh, N. Sharma, R. Kumar, et al. “Enhancement of Magnetoresistance in Perovskite La-Mn-O Films by Increasing Manganese Content”. Applied Physics Letters, vol. 88, no. 24, 2006.2. X. Wang, J. Ding, H. Zhang, et al. “Surface Modification and Magnetic Properties of La–Mn–O–C Films”. Journal of Alloys and Compounds, vol. 586, 2014.3. X. Wang, Y. Li, B. Zhang, et al. “Ferromagnetic Properties of La-Mn-O-C Films Deposited by RF Magnetron Sputtering”. Physics Letters A, vol. 379, no. 17, 2015.
 

1. What is the role of Mn in magnetoresistance of perovskite?

Mn (manganese) is a transition metal that is commonly used in perovskite materials due to its ability to induce magnetic properties. It acts as a dopant, replacing some of the other metal ions in the perovskite crystal lattice, and helps to create a spin-polarized electron state which is responsible for the magnetoresistance effect.

2. How does Mn affect the magnetoresistance of perovskite?

Mn has a significant impact on the magnetoresistance of perovskite due to its ability to create a spin-polarized electron state. This state allows for a larger difference in resistance between the two spin directions, resulting in a higher magnetoresistance effect.

3. What other factors can influence the role of Mn in magnetoresistance of perovskite?

The role of Mn in magnetoresistance can also be affected by factors such as the concentration of Mn dopants, the crystal structure of the perovskite material, and the temperature at which the material is operating. These factors can all impact the efficiency and stability of the magnetoresistance effect.

4. Can the role of Mn in magnetoresistance be enhanced?

Yes, the role of Mn in magnetoresistance can be enhanced by optimizing the concentration of Mn dopants, as well as by controlling the crystal structure and incorporating other elements into the perovskite material. Additionally, advancements in synthesis and processing techniques can also improve the role of Mn in magnetoresistance.

5. How is the role of Mn in magnetoresistance of perovskite relevant in practical applications?

The role of Mn in magnetoresistance of perovskite has significant implications in various practical applications, such as in spintronic devices, magnetic storage, and sensor technologies. By understanding and optimizing the role of Mn, we can develop more efficient and reliable devices for these applications.

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