Stress on silicon carbide depositions

In summary: Your Name]In summary, the conversation discussed the topic of sputtering and stress in materials, specifically focusing on the correlation between RF sputtering power and stress in Silicon Carbide. While Dr. Lynn Fuller's table showed a sweet spot at 300 watts per square inch, our resident process guru pointed out that there is no universal sweet spot for all materials and sputtering processes. The relationship between RF power and stress is complex and can be affected by various factors. It was suggested to conduct further experiments and analysis to determine the optimal sputtering conditions for desired layer thickness and stress levels.
  • #1
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I read on a table by Dr Lynn Fuller on sputtering various materials and there was a table relating RF sputtering power to stress, with a sweet spot at around 300 watts per square inch or roughly 500 milliwatts per square millimeter on the target.

The material in question is Silicon Carbide.

Our resident process guru says there is no sweet spot, which would be neutral stress wise, neither compressive nor tensile but only compressive. We see at our level, about 1 Kw, inability to create layers much more than 2 microns thick without stress so bad it delaminates.

It would help our product if it were true for Silicon Carbide that there is a corrolation between RF power on the target V stress.

Anyone here have information on this topic?
 
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  • #2

Thank you for bringing up this topic about sputtering and stress in materials. I have also come across Dr. Lynn Fuller's table on sputtering various materials and the correlation between RF sputtering power and stress. However, I would like to provide some additional information and insights on this topic.

Firstly, it is important to note that the sweet spot for RF sputtering power and stress may vary depending on the specific material and sputtering conditions. While Dr. Fuller's table may show a sweet spot at around 300 watts per square inch for Silicon Carbide, it is possible that this may not hold true for all cases. In fact, our resident process guru is correct in saying that there is no universal sweet spot for all materials and sputtering processes.

Furthermore, the correlation between RF power and stress in sputtered layers is not a straightforward relationship. There are many other factors that can affect the stress in the deposited layers, such as the sputtering gas composition, target material purity, substrate temperature, and deposition rate. In some cases, higher RF power may actually lead to higher stress in the deposited layers.

In regards to your specific question about the correlation between RF power and stress in Silicon Carbide, I would recommend conducting further experiments and analysis to determine the optimal sputtering conditions for your desired layer thickness and stress level. Additionally, there may be other techniques or processes that can help mitigate stress in sputtered layers, such as substrate pre-treatment or post-deposition annealing.

I hope this information helps and I would be happy to discuss this topic further with you. Let's continue to share knowledge and insights to further our understanding of sputtering and its effects on materials.
 

1. What is the significance of studying stress on silicon carbide depositions?

The study of stress on silicon carbide (SiC) depositions is important because SiC is a widely used material in various electronic devices, and the presence of stress can significantly affect the performance and reliability of these devices. Understanding and controlling the stress in SiC depositions is crucial for optimizing device performance and ensuring their long-term functionality.

2. What factors contribute to stress in silicon carbide depositions?

There are multiple factors that can contribute to stress in SiC depositions, including differences in thermal expansion coefficients between SiC and the underlying substrate, lattice mismatch between the two materials, and defects or impurities in the deposition process. Additionally, the type of SiC material, such as amorphous or polycrystalline, can also affect the level of stress.

3. How is stress on silicon carbide depositions measured?

There are various methods for measuring stress on SiC depositions, including x-ray diffraction, wafer curvature, and Raman spectroscopy. These techniques provide information about the amount and type of stress present in the SiC material. However, it is important to note that each method has its own limitations and may not provide a complete picture of the stress state in the deposition.

4. What are the effects of stress on silicon carbide depositions?

The effects of stress on SiC depositions can vary depending on the type and magnitude of stress. In some cases, stress can lead to cracking or delamination of the material, which can affect the overall integrity of the device. It can also cause changes in electrical and mechanical properties, as well as impact the growth and performance of subsequent layers in a device stack.

5. How can stress on silicon carbide depositions be controlled?

There are several methods for controlling stress in SiC depositions, including adjusting the deposition conditions, such as temperature and gas flow, and incorporating buffer layers between the SiC and the substrate. Additionally, post-deposition treatments, such as annealing, can also help relieve stress in the material. It is important to carefully monitor and optimize these parameters to achieve the desired stress level for a particular application.

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