Substitutional impurity in a lattice?

  • Thread starter orangeincup
  • Start date
  • Tags
    Lattice
In summary, boron atoms at a concentration of 3.60E+16 atoms/cm3 are added to pure intrinsic silicon, resulting in a fraction of .99 by weight accounted for by impurity atoms in the lattice. This is calculated by finding the total weight of silicon and boron atoms in a cubic centimeter, with the number of silicon atoms being determined by the unit cell of a diamond cubic crystal and the lattice constant of 5.43 angstroms.
  • #1
orangeincup
123
0

Homework Statement


Boron atoms at a concentration of 3.60E+16 atoms/cm3 are added to pure intrinsic silicon as a substitutional impurity. Assume that the boron atoms are distributed homogeneously through the silicon in a cubic array.

Enter the fraction, by weight, accounted for by impurity atoms in the lattice. To do this, you will need to remember that silicon has a diamond structure with a lattice constant of 5.43 angstroms

Homework Equations


8/(a)^3=volume density

The Attempt at a Solution


8/(a)^3=4.99*10^23

3.60*10^22+4.99*10^23/4.99*10^23 = .99
 
Physics news on Phys.org
  • #2
I have no idea what you have attempted to do in your calculation. Some words would help. How many silicon atoms are in a cm^3, and how did you calculate it? How many boron atoms are in the same cm^3? What is the total weight of these silicon atoms? What is the total weight of the boron atoms? The ratio of the two will give you the fraction by weight.
 
  • #3
orangeincup said:

Homework Statement


Boron atoms at a concentration of 3.60E+16 atoms/cm3 are added to pure intrinsic silicon as a substitutional impurity. Assume that the boron atoms are distributed homogeneously through the silicon in a cubic array.

Enter the fraction, by weight, accounted for by impurity atoms in the lattice. To do this, you will need to remember that silicon has a diamond structure with a lattice constant of 5.43 angstroms

Homework Equations


8/(a)^3=volume density

The Attempt at a Solution


8/(a)^3=4.99*10^23

3.60*10^22+4.99*10^23/4.99*10^23 = .99

phyzguy said:
I have no idea what you have attempted to do in your calculation. Some words would help. How many silicon atoms are in a cm^3, and how did you calculate it? How many boron atoms are in the same cm^3? What is the total weight of these silicon atoms? What is the total weight of the boron atoms? The ratio of the two will give you the fraction by weight.

Since the weights of silicon and boron atoms are essentially a given, I think the hard part of your problem is finding how many silicon atoms there are in a cubic centimeter of the material. If I remember rightly there are eight atoms in the unit cell for a diamond cubic crystal, that combined with the lattice constant should help to get you there.
 

1. What is a substitutional impurity in a lattice?

A substitutional impurity in a lattice is a type of point defect in a crystal structure where an atom or ion of a different element replaces a regular atom or ion in the lattice. This substitution can occur during the formation of the crystal or through intentional doping.

2. How does substitutional impurity affect the properties of a lattice?

The presence of a substitutional impurity can significantly alter the physical, chemical, and electrical properties of a lattice. This is because the impurity atom or ion has a different size, charge, and electronic structure compared to the regular atoms in the lattice, leading to changes in the lattice's overall structure and behavior.

3. What is the difference between substitutional and interstitial impurities?

Substitutional impurities replace regular atoms in the lattice, while interstitial impurities occupy spaces between the regular lattice atoms. Substitutional impurities can significantly alter the lattice's properties, while interstitial impurities generally have a minor effect.

4. How does the concentration of substitutional impurities affect the lattice?

The concentration of substitutional impurities can have a significant impact on the lattice's properties. At low concentrations, the impurities may have a minimal effect, but at higher concentrations, they can lead to changes in the lattice's structure, electrical conductivity, and other properties.

5. Can substitutional impurities be intentionally added to a lattice?

Yes, substitutional impurities can be intentionally added to a lattice through a process called doping. This is commonly done in the semiconductor industry to control and modify the electrical properties of materials for specific applications.

Similar threads

  • Advanced Physics Homework Help
Replies
1
Views
3K
  • Advanced Physics Homework Help
Replies
1
Views
977
  • Advanced Physics Homework Help
Replies
1
Views
1K
  • Advanced Physics Homework Help
Replies
1
Views
2K
  • Advanced Physics Homework Help
Replies
2
Views
1K
  • Advanced Physics Homework Help
Replies
1
Views
6K
  • Advanced Physics Homework Help
Replies
1
Views
2K
  • Introductory Physics Homework Help
Replies
1
Views
1K
  • Advanced Physics Homework Help
Replies
6
Views
28K
  • Advanced Physics Homework Help
Replies
1
Views
3K
Back
Top