Thank you for the information.
I did not realize that r-cut and R-cut are prepared with a different plane face.
Some reports said that they used sapphire (1-102) for their substrates. Now I am not sure if this is an r- or R-sapphire.
Thank you for pointing out that they have calculated this by using the GaN(10-10) and Al2O3(11-20)
I have calculated this using the same formula and have arrived at a value of 14%, which should be tolerable since my database and C. J. Rawn's would exhibit different degree of strain.
The...
Dear Physics Forum
It has been reported that the lattice mismatch of GaN/Sapphire is ~13.9%.
I have tried the following formula, but got the wrong answer:
[(GaN-Al2O3)/GaN] x 100%
where:
GaN = 3.189 Angstroms
Al2O3 = 4.765 Angstroms
Obviously I am missing something huge...
Dear HIUk,
The method above is actually the proper way to assign hkl values to each peak.
By any chance this is a XRD phase analysis measurement for Silicon? As far as I know, one can assign a peak to a hkl value by comparing the peak position to a JCPDS card (Joint Committee of Powder...
As I understand, the way Atomic Force Microscopes (AFM) work is by taking advantage of the van der Waals force between the tip and the surface. It is important to note that the tip does not actually touch the surface of the sample: leaving a very small space in between them.
In Scanning...
The bonding strength of Ga-N is 8.92 ev/atom [1],
Whereas the bonding strength of Ar is 4.73 kJ/mol [2]. Converting this, I got ~0.049 eV/atom.
It can be seen that Ga to N bonding has a higher bonding strength compared to Ar. However, in my opinion, I should determine the energy given by the...
Hello,
I am currently working on sputtering method for thin film deposition of III-Nitrides. The target used was a gallium nitride (GaN) plate and plasma generation was achieved by radio frequency (RF).
After running the sample through phase analysis, interestingly a gallium oxide (Ga2O3)...
Thank you for introducing the UB matrix. Somehow I am not aware of this.
The literature is very interesting, although I may have to digest the contents slowly.
Million thanks for the reply and explanation.
I did not realize that this is an azimuth scan.
Since this result, we have always align the phi axis to the angle with the best intensity before performing phase analysis scans.
I am sorry, M Quack, but can you explain the term UB matrix? Thank...
A few months back my colleagues and I are facing a problem where the intensity of our sapphire peak fluctuates every time an XRD phase analysis was done, even when the scan was done on the same sample.
By accident, I found that the orientation of the sapphire substrate with respect to phi...
I understand that in photoluminescence band edge emission in direct band gap semiconductors originates from the recombination of electron and hole in the edge of conduction and valence bands. However, recently I have stumbled upon near-band-edge emission, which seem to suggest the existence of...