Can electrons occupy energy levels in the band gap?

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Discussion Overview

The discussion revolves around the concept of the band gap in semiconductors and whether electrons can occupy energy levels within this gap. Participants explore the definitions and implications of the Fermi level and chemical potential, particularly at absolute zero and in relation to semiconductor physics.

Discussion Character

  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • Some participants assert that the Fermi level is not well-defined in semiconductors and should be referred to as the chemical potential instead.
  • One participant mentions that there are no states in the band gap, but under certain conditions, pseudostable energy states may exist, such as excitons, which are not due to the band structure.
  • Another participant questions the interpretation of the probability of finding an electron at the Fermi energy, noting that textbooks often carry over terminology from metals, which may lead to confusion.
  • Concerns are raised about calculating the absolute value of the Fermi level in semiconductors, with references to the band gap and effective density of states.
  • One participant highlights the relativity of energy levels, suggesting that asking for an absolute value of the Fermi level is akin to asking for an absolute potential energy.
  • There is a discussion about whether a chemical potential can be defined in semiconductors, with some suggesting it can vary within the band gap.

Areas of Agreement / Disagreement

Participants express differing views on the definitions and implications of the Fermi level and chemical potential in semiconductors. There is no consensus on whether electrons can occupy states in the band gap, and the discussion remains unresolved regarding the interpretation of these concepts.

Contextual Notes

Participants note limitations in the definitions used and the potential confusion arising from applying concepts from metals to semiconductors. The discussion highlights the complexity of energy states in semiconductors and the need for careful terminology.

Karthikeyan
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Hi all,
We say the energy difference between the Top of Valence band and the bottom of Conduction band as the forbidden gap or Band gap. But when we see the fermi level at zero Kelvin, its exactly at the middle of the band gap. Does this mean that there is possibility for an electron to occupy some of the energy level in the forbidden gap?? Please clarify.
 
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In the strictest sense, there really is no "Fermi level" in a semiconductor and band insulators. This is because the term "Fermi level" is defined for the occupied electron states in metals. Many books (and I do this also myself) are sloppy with their notation. In semiconductors and band insultators, what it should really be called is the "chemical potential".

So no, there are no states in the gap. However, under certain circumstance, you might have a pseudostable energy state that may be occupied in the gap, as in the case of an exiton. However, this state is NOT due to the band structure of the material (which is still empty), but rather due to the hydrogenic energy level created by the electron-hole pair. This should never be confused as the energy state originating from the material itself.

Zz.
 
Thanks...In most of the Semiconductor Physics Textbooks, they say that the probability of finding an electron at Fermi Energy ( Chemical Potential, as you say ) is 0.5. What does this mean?? and why should the probability curve is symmetric about the fermi level (i.e 0.5 probability) above zero Kelvin ??
 
Karthikeyan said:
Thanks...In most of the Semiconductor Physics Textbooks, they say that the probability of finding an electron at Fermi Energy ( Chemical Potential, as you say ) is 0.5. What does this mean?? and why should the probability curve is symmetric about the fermi level (i.e 0.5 probability) above zero Kelvin ??

Again, they are using the terminology carried over from metals. Look at the Fermi level for a metal. At T>0 K, the Fermi function will start to evolve from a step function, to a rounded curve at the top and a tail at the bottom foot. At any temperature, the probability (which corresponds to the occupation number Fermi function) is always half.

So what your text is doing is to carry over that definition into the semiconductor, which is what I said before. It isn't entirely wrong if you "extrapolate" the statistics of the occupation number in the valence band and the conduction band of the semiconductor, but it is sloppy and confusing to say that, since obviously, there are NO states in the gap.

Zz.
 
Does that mean I cannot really calculate the absolute value (number) of the so-called Fermi level in semiconductor e.g. Si, like we can in Metal? All I know are its the band gap which is 1.12 eV and the formula that relates position of the so-called Fermi level to conduction and valence band edge energy, temperature and effective density of states (in terms of effective mass).
I wonder if it is legitimate to calculate the valence band edge energy first at T = 0 K using the same method as in calculating Fermi energy for metal. We do not know the density of states of electron in bonds. It looks like free electron model that we used to derive the density of state doesn't work in this case because all electron are bonded. Can anyone confirm this for me?
 
Wow. I hope you know that you're asking in a thread that had its last activity in 2006! Pay attention to the DATE of the post.

Secondly, I don't understand your question. All energy levels are measured with respect to something. Often one designates the energy of the Fermi level to be zero, and so everything else is measured from there. So insisting on an "absolute value" is a bit like asking for an absolute value of a potential energy. Your "zero" could be different than my "zero".

Zz.
 
ZapperZ said:
In the strictest sense, there really is no "Fermi level" in a semiconductor and band insulators. This is because the term "Fermi level" is defined for the occupied electron states in metals. Many books (and I do this also myself) are sloppy with their notation. In semiconductors and band insultators, what it should really be called is the "chemical potential".

Zz.

So should we say that a "chemical potential" can not be truly defined such as in a semiconductor and band insulators, because it can be anywhere between the upper and lower edges of the band gap?
 
Last edited:
You can define a chemical potential, but not a Fermi level, in the strictest sense.

Zz.
 

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