Calculation of Conduction Electron Population for Semi Conductor

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Discussion Overview

The discussion revolves around the calculation of the conduction electron population in semiconductors, focusing on the derivation of related formulas and the properties of intrinsic semiconductors. Participants explore theoretical aspects, mathematical expressions, and potential errors in derivations.

Discussion Character

  • Technical explanation
  • Mathematical reasoning
  • Debate/contested

Main Points Raised

  • One participant questions whether the expression E_F = E_gap / 2 is a defined property of semiconductors.
  • Another participant states that the formula for the density of electrons in the conduction band is a good approximation only for classical gas behavior in intrinsic semiconductors, noting that the Fermi level's position depends on doping level, temperature, and effective density of states.
  • A participant points out that the exponential factor in the expression must be dimensionless, suggesting a potential error in the original formula provided.
  • One participant provides a more precise equation for the Fermi level in intrinsic semiconductors, acknowledging that it does not lie exactly at the center of the band gap at non-zero temperatures due to differing effective masses of holes and electrons.
  • Another participant expresses gratitude for the clarification regarding the Fermi level and indicates a plan to consult solid state physics books for further understanding.

Areas of Agreement / Disagreement

Participants express differing views on the properties of the Fermi level in semiconductors and the correctness of the mathematical expressions involved. No consensus is reached regarding the errors in the derivation or the definitions of terms used.

Contextual Notes

Participants highlight the importance of assumptions regarding the classical behavior of the electron gas and the conditions under which the approximations hold. There is also mention of the need for dimensionless exponential factors in the equations discussed.

opuktun
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Hi everyone,

From this website (link: http://hyperphysics.phy-astr.gsu.edu/HBASE/solids/fermi3.html#c1 ), we get the following expression:

Population Density of Conduction Electron = \int ^{\infty}_{Egap}N(E)d(E) = \frac{2^{5/2}(m \pi k T)^{3/2} exp (-E gap/2kT)}{h^3}

My questions are based on the derivation given by the website as follow:-1. EF = Egap / 2
Is this a defined property of semiconductors?2. Is there an error in the following expression?
N(E)d(E) = \frac{8\sqrt{2} \pi m^{3/2}}{h^3} \sqrt{E-Egap}\ e^{-(E-Egap/2)}
I mean originally it has kT in the power of exponential term. Is it mistakenly dropped?3. Is "integration by parts" applied on the following expression?
N(E)d(E) = \frac{8\sqrt{2} \pi m^{3/2}}{h^3} \sqrt{E-Egap}\ e^{-(E-Egap/2)}
Somehow, I can't solve the integration.Thanks.
 
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Formula for density of electrons in conduction band is a good approximation for a classical gas of carriers in intrinsic semiconductors. Only if electron gas is classical you can approximate Fermi - Dirac statistic with Boltzmann one and only if the semiconductor is intrinsic Fermi's level is in the middle of energy gap. In a more general
way Fermi's level depends on doping level, temperature and effective density of states.
Regarding point 2 the exponential factor must be dimensionless.

For more details it's better if you'll see on solid state physics's books. You' ll find clearer derivations than the one you found on the link you posted.

Matteo.
 
Just to address your first question: in intrinsic semiconductors (no impurities present), the Fermi level is often approximated as lying at the center of the band gap. It doesn't lie exactly at the center at non-zero temperatures, however, because the effective masses of holes and electrons are different. A more precise equation is

E_F=E_V+\frac{E_g}{2}+\frac{3}{4}k_B T \ln\frac{m^\star_h}{m^\star_e}
 
Mapes said:
E_F=E_V+\frac{E_g}{2}+\frac{3}{4}k_B T \ln\frac{m^\star_h}{m^\star_e}

Thanks Mapes for the explanation, I finally understood the r/s.

matteo83 said:
Regarding point 2 the exponential factor must be dimensionless.

For more details it's better if you'll see on solid state physics's books. You' ll find clearer derivations than the one you found on the link you posted.

Thanks matteo. I'm gng to hit those books in my lib. :)
 

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