CE BJT Amplifier - Collector Resistance

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Discussion Overview

The discussion revolves around the derivation and application of the collector resistance equation for a common emitter (CE) BJT amplifier. Participants explore the differences between two expressions for collector resistance and the assumptions underlying these equations, focusing on the implications of approximations in the context of amplifier design.

Discussion Character

  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant notes a discrepancy between two equations for collector resistance: Ric = ro[1+gm(Re||r∏)] and Ric = ro(1+gm*Re), expressing confusion over the transition between them.
  • Another participant suggests that the approximation Re||r∏ ≈ Re is commonly used when Re is much smaller than r∏.
  • A different formulation is introduced: Rci ≈ ro * (re + Re)/re, where re is defined as 1/gm = 26mV/Ic.
  • Concerns are raised about the lack of explicit statements regarding approximations in the text, which complicates understanding for learners.
  • It is emphasized that Ric should not exceed β*ro, as this is a limitation for the common-base amplifier configuration.

Areas of Agreement / Disagreement

Participants express varying levels of understanding regarding the assumptions behind the equations and the implications of those assumptions. There is no consensus on the clarity of the text or the appropriateness of the approximations used.

Contextual Notes

Participants highlight the need for clearer communication of assumptions in the derivation of equations, particularly regarding the conditions under which certain approximations are valid.

hisotaso
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We are studying single transistor amplifiers, and in the text where the collector resistance of the CE amplifier, Ric, is derived, the final equation is

Ric = ro[1+gm(Re||r∏)] (approximation)

This equation is highlighted and emphasized as something we should remember, then shown again in a large blue box on the next page as a "Design Note" (large emphasis in this text).

However in the table at the end of the section that summarizes the CE/CS amplifier design summary, and the big table at the end of the chapter that lists the design summary for all of the BJT amplifiers, the equation is given as

Ric = ro(1+gm*Re)

I have been looking for hours and there is nowhere that I can find where this transition takes place. The text is Microelectronic Circuit Design, 4th edition by Jaeger and Blalock. I am at a loss.
 
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Well they simply assume the Re<<r∏ so Re||r∏ ≈ Re

And sometime we use this version

Rci ≈ ro * (re + Re)/re

Where

re = 1/gm = 26mV/Ic

But Ric cannot be greater than Rci_max = β*ro for Common-base amplifier.
 
Thank you Jony130 for your reply. I apologizr for not being clearer, this is a common emitter amplifier (CE), I don't know if this makes a difference.

Also you have pointed out something that has been driving me crazy with this text, that is approximations are often made without explicitly stating so. This is frustrating when learning a new subject and not completely confident with the subject matter.
 
Simply you should always remember that if you use this equation
Ric = ro[1+gm(Re||r∏)]
If result is greater than β*ro your approximation equations tricks you. Because Ric can never exceed β*ro.
 
Last edited:

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