SUMMARY
The discussion clarifies the equations governing drain current in PMOS and NMOS transistors operating in the triode region. It establishes that for NMOS, the gate-source voltage (Vgs) must exceed the threshold voltage (Vth) for current to flow from drain to source, while for PMOS, the gate must be more negative than the source by Vth, allowing current to flow from source to drain. The confusion regarding the sign of the drain current in PMOS is addressed, emphasizing that the mathematical polarity should not overshadow the fundamental operation principles of the devices.
PREREQUISITES
- Understanding of PMOS and NMOS transistor operation
- Familiarity with threshold voltage (Vth) concepts
- Knowledge of gate-source voltage (Vgs) and drain-source voltage (Vds) relationships
- Basic grasp of electrical current flow in semiconductor devices
NEXT STEPS
- Study the equations for PMOS and NMOS drain current in the triode region
- Learn about the significance of threshold voltage (Vth) in MOSFET operation
- Explore the differences between triode and saturation regions in MOSFETs
- Investigate the impact of voltage polarities on current flow in semiconductor devices
USEFUL FOR
Electrical engineering students, semiconductor device designers, and professionals working with MOSFETs in circuit design will benefit from this discussion.
