Finding the current in the drain of a MOSFET

[bl965]

Homework Statement

The equations provided require the oxide permittivity (ε_ox)as well as the oxide thickness (t_ox) to determine the gate oxide capacitance per unit squared (C_ox). How to solve this?

Homework Equations

In triode region: I_D = μ_n * C_ox * W/L * ((V_GS-V_th)* V_DS - V_DS²/2

In saturation = μ_n * C_ox * 1/2 * W/L * (V_GS-V_th)² * (1 + λ*V_DS)

C_ox = ε_ox / t_ox

The Attempt at a Solution

Without ε_ox, I can't get C_ox; I can't start.

 

[phyzguy]

tox is given. εox you should be able to look up. Assume the device uses silicon dioxide as the gate dielectric.