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Finding the current in the drain of a MOSFET

  1. Jan 11, 2017 #1
    1. The problem statement, all variables and given/known data
    temp.png
    The equations provided require the oxide permittivity (εox)as well as the oxide thickness (tox) to determine the gate oxide capacitance per unit squared (Cox). How to solve this?

    2. Relevant equations
    In triode region: ID = μn * Cox * W/L * ((VGS-Vth)* VDS - VDS2/2

    In saturation = μn * Cox * 1/2 * W/L * (VGS-Vth)2 * (1 + λ*VDS)

    Cox = εox / tox

    3. The attempt at a solution
    Without εox, I can't get Cox; I can't start.
     
  2. jcsd
  3. Jan 12, 2017 #2

    phyzguy

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    Science Advisor

    tox is given. εox you should be able to look up. Assume the device uses silicon dioxide as the gate dielectric.
     
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