CMOS Sensor Process: .50um & .35um Explained

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Discussion Overview

The discussion revolves around the manufacturing processes of CMOS sensors, specifically comparing the .50um process from around 2000 with the .35um process from around 2004. Participants explore the implications of these process sizes on sensor characteristics, costs, and design considerations, while also seeking resources for further reading on CMOS sensor manufacturing.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • Some participants inquire whether the sensors in question are CMOS image sensors or other types.
  • It is noted that the .50um and .35um processes are considered large geometries by current standards, with modern processes being smaller, such as 0.18u, 0.13u, and 90nm.
  • One participant suggests that the process feature size does not provide much information about the sensor's performance, emphasizing the importance of specifications like pixel count, fill factor, noise floor, and other operational characteristics.
  • There is a discussion about the cost implications of different wafer sizes and process technologies, with the .50um process potentially having lower costs under certain conditions.
  • Participants mention that the .35um process may allow for a higher fill factor, but this advantage could be offset by the presence of microlenses in the .50um sensor.
  • One participant provides links to resources for further reading on image sensor design and manufacturing processes.
  • Clarification is provided that the .50um and .35um dimensions refer to the smallest features that can be fabricated using those processes, although variations exist based on specific conditions.

Areas of Agreement / Disagreement

Participants express varying opinions on the significance of process feature sizes and their impact on sensor performance, indicating that multiple competing views remain without a clear consensus.

Contextual Notes

Some limitations are noted regarding the assumptions about cost and performance, as well as the dependence on specific definitions of terms like "fill factor" and "pixel pitch." The discussion does not resolve these complexities.

Who May Find This Useful

This discussion may be useful for individuals interested in the technical aspects of CMOS sensor manufacturing, image sensor design, and the implications of process technology on sensor performance.

nbo10
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If I'm talking to someone about cmos sensors and they tell me one sensor is made in the .50um process (circa 2000) and the other sensor is made in the .35um process (circa 2004).

What are they tell me about the cmos sensor? Are there any good books on manufacturing cmos sensors?

thanks
 
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nbo10 said:
If I'm talking to someone about cmos sensors and they tell me one sensor is made in the .50um process (circa 2000) and the other sensor is made in the .35um process (circa 2004).

What are they tell me about the cmos sensor? Are there any good books on manufacturing cmos sensors?

thanks

Are these CMOS image sensors? Or some other kind of sensor?

Yeah, those are definitely pretty big geometries by today's standards. Current processes for mixed signal ICs are more like 0.18u, 0.13u and 90nm.
 
berkeman said:
Are these CMOS image sensors? Or some other kind of sensor?

Yeah, those are definitely pretty big geometries by today's standards. Current processes for mixed signal ICs are more like 0.18u, 0.13u and 90nm.

Yes they are image sensors.
 
Ah, that's different. No wonder they are using larger geometries. Here's an interesting article that I found by googling image sensor IC design:

http://chipdesignmag.com/display.php?articleId=2175&issueId=27

That magazine also looks to be a good resource for IC design information.

And a search at Amazon.com on Image Sensor Design gave some very good hits:

https://www.amazon.com/s/ref=nb_ss?...eywords=image+sensor+design&tag=pfamazon01-20

.
 
nbo10 said:
If I'm talking to someone about cmos sensors and they tell me one sensor is made in the .50um process (circa 2000) and the other sensor is made in the .35um process (circa 2004).

What are they tell me about the cmos sensor? Are there any good books on manufacturing cmos sensors?

thanks

The process feature size doesn't tell you much. In general the per wafer cost for 0.5 um will be lower than 0.35 um. So for the same pixel pitch and number of pixels the 0.5 um chip cost might be lower. Then again if the 0.5 um is 6" wafer and 0.35 um is 8" wafer the latter may be cheaper.

The 0.35 um will probably have higher fill factor for a given size pixel, meaning the light collecting area will be a higher percentage of the pixel area. But that may not matter if the 0.5 um has microlenses.

The 0.35 um may have a longer stay in production but maybe not.

It doesn't hurt to know the process feature size but it really doesn't matter much as a user. You should focus on specs you care about: number of pixels, fill factor, noise floor(directly affects the minimum amount of light you can sense), full well capacity (the maximum amount of light generated signal the pixel can measure, linearity, pixel to pixel response uniformity, etc. Also one chip may have functions outside the pixels that you care about such as pixel output rate, digital or analog output, on-chip processing, power dissipation, cost etc.

The CMOS sensor manufacturing is basic CMOS process plus a photodiode "module" (some extra processing steps). So you can look at books that talk about CMOS processing to get a good idea. The photodiode is similar to other diodes but will have its parameters tweaked (depth, doping level) and possibly covered with an optical filter or lens. The substrate material (or probably the epitaxial material on top) will probably have a tighter specification as well to limit the detector dark current.
 
What dimension is the the 0.5 or 0.35 um referring to? Thanks
 
nbo10 said:
What dimension is the the 0.5 or 0.35 um referring to? Thanks

It generally refers to the smallest feature that can be drawn/fabricated using that process. Although there are variations on the number, depending on certain things. Here's an example explanation:

http://en.wikipedia.org/wiki/65_nanometer

.
 

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