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Combining p-type and n-type semiconductor materials

  1. Jun 24, 2015 #1
    Hi Guys, i want to fabricate semiconductor p-type and n-type material and i want it to combine to make a p-n junction diode, but i don't know how to combine or merge the two, (my materials are thin films) i'm thinking to solder it but i'm afraid that it will break, or distort, or i'm thinking to anneal the two, but i'm also afraid that the dopant in each material diffuse on both side, is there any way or method to easily combine the two materials? thanks.
     
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  3. Jun 24, 2015 #2

    ZapperZ

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    You do know that the standard and common technique is to grow one film followed by the other, don't you? Otherwise, you will have an oxide layer, junk, etc. wedged in between the two and you won't have a clean PN junction. Using ANY kind of connection to produce a contact will no longer be PN junction. It will be a P-something-N junction and you will have contact-potential issues at each of those interfaces.

    Zz.
     
  4. Jun 24, 2015 #3
    Yes Sir, please educate me about the common technique to grow one film followed by the other to make it p-n junction, (for example i have p-type copper oxide and n-type copper oxide, how i will grow a p-type copper oxide on the surface of n-type copper oxide or vice versa? ) thank you
     
  5. Jun 24, 2015 #4

    ZapperZ

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    Figure out how each one of those was grown! There are numerous thin-film fabrication techniques. They are your films. You have to find out how they were made.

    Zz.
     
  6. Jul 8, 2015 #5
    check out thin film deposition, photolithography and doping processes for a start. do you think you can get the two materials you have to create a diffusion layer? Ficks 2nd law with temperature dependent diffusion coefficient?

    http://www.halbleiter.org/en/waferfabrication/doping/
    https://www.memsnet.org/about/processes/deposition.html
    https://en.wikipedia.org/wiki/Photolithography

    sorry if these links are against the rules. not journal articles i know.
     
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