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I'm trying to measure the effect of adding charges in the silicon dioxide separating two interconnects in VLSI circuits and how it will effect the coupling capacitance between these two wires. How can I measure this effect ? The VLSI circuit I'm working on has frequency of 500 Mhz.

What I did so far is playing a little with FastFieldSolver tool and see the effect of changing the dielectric constant on the coupling capacitance between two wires....but still I don't know how the dielectric constant is related to charge (impurities) concentration in the silicon dioxide.

My goal is to be able to tune the dielectric constant of the silicon dioxide by adding charges (impurities) in the silicon dioxide ...and how to count the effect of operating frequency in my calculations.

Thanks

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# Coupling capacitance between interconnects in VLSI

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