Designing a Clapp Oscillator: Distinguishing Negative Resistance & Tank Circuit

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Discussion Overview

The discussion revolves around the design of a Clapp oscillator, specifically focusing on distinguishing the components that act as a negative resistance generator from those that function as a tank circuit. The conversation includes considerations of component values and circuit configurations, as well as the implications of these choices on the oscillator's performance.

Discussion Character

  • Technical explanation
  • Debate/contested
  • Experimental/applied

Main Points Raised

  • One participant questions how to differentiate between the negative resistance generator and the tank circuit in their Clapp oscillator design.
  • Another participant asserts that the coil and capacitors constitute the tank circuit while the FET serves as the negative resistance, expressing skepticism about the use of unrealistic component values.
  • A participant acknowledges the need for transmission lines in the design and expresses confusion about other inconsistencies, while also noting their intention to create subcircuits for testing resonance.
  • Concerns are raised about the practicality of using very low values for inductance and capacitance, suggesting that the internal characteristics of the FET would dominate these values.
  • A participant admits to using default values in their schematic for demonstration purposes but clarifies that their actual static capacitors are 1 pF and mentions the omission of the DC bias circuit in the schematic.
  • There is a request for reading material on "true" negative resistance that supplies power, indicating a desire for deeper understanding.

Areas of Agreement / Disagreement

Participants express differing views on the appropriateness of the component values used in the design, with some questioning their realism while others defend their choices. The discussion remains unresolved regarding the implications of these values on the oscillator's functionality.

Contextual Notes

Participants highlight limitations related to the choice of component values, the absence of a DC bias circuit in the schematic, and the potential impact of the FET's internal capacitances and inductances on the oscillator's performance.

dalarev
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Attached is an image of the clapp oscillator I am designing, DC bias not shown.

My question is, how can I distinguish between the part of the circuit acting as the negative resistance generator and that which functions as a tank circuit?

The resistor shown in the image is not part of the DC bias.
 

Attachments

  • Clapp Sch.JPG
    Clapp Sch.JPG
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The coil and capacitors are the tank circuit and the FET is the negative resistance.

This is very similar to your last post
https://www.physicsforums.com/showthread.php?t=347677
so I have to wonder why are persisting with such unrealistic values of components?
 
vk6kro said:
The coil and capacitors are the tank circuit and the FET is the negative resistance.

This is very similar to your last post
https://www.physicsforums.com/showthread.php?t=347677
so I have to wonder why are persisting with such unrealistic values of components?

Are you referring to the absence of transmission lines? They will be implemented in the design, but I fail to see other apparent inconsistencies with it.

My goal is to create subcircuits of the tank circuit/negative resistance generator separately, then use an oscillator probe available in the simulator which injects (initial) signals of certain frequency to test which one it will resonate at.
 
dalarev said:
Are you referring to the absence of transmission lines? They will be implemented in the design, but I fail to see other apparent inconsistencies with it.

I think he means unrealistic values like 1 Ohm // 1 pF.
 
Yes, that is right.

Modelling with values like 1nH, 1 pF and 1 ohm and with no DC bias values means the oscillator has no chance of working because the FET will have internal capacitances and inductances that are much greater than these values.

Why is there a 1 ohm resistor across the FET?
 
Ahhh, hahaha, yes. My mistake; those parameters are only default values because I put together a schematic quickly just to be able to take a screenshot of it, to show the layout.

Though, in practice, both of my static capacitors do have values of 1 pF. My DC bias is not shown, but the NMOS allows a bias current of 0.5 mA. I keep omitting the DC bias circuit, though, because in the simulator I will use a block diagram of it.I was hoping someone could provide some good reading material on "true" negative resistance, meaning one which supplies power.
 

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