GaAs crystal structures have basis atoms:(adsbygoogle = window.adsbygoogle || []).push({});

Ga: (0 0 0), (0.5 0.5 0),(0.5 0 0.5),(0 0.5 0.5)

As: (0.25 0.25 0.25),(0.75 0.75 0.25),(0.75 0.25 0.75),(0.25 0.75 0.75)

i'm trying to find intensities at all of its plane, using this equation:

I = (F^2)*m*Lf (m= multiplicity, Lf=lorentz factor)

where F = f*cos(2*pi*(hx +ky +zl)), (f =atomic scattering factor)

or you could used:the simplest form:

F^2 = 16(fGa^2 + fAs^2 + 2f*Ga*fAs*(cos(90*(h+ k +)l)) )

but using this equation you would have peaks at 001 plane and other planes that base on literature would generate a zero Intensity,

so my problem was, are my equations or the F^2 simplest form are correct?

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# Determine the intensities of GaAs crystal planes

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