SUMMARY
The effective electron mass and effective hole mass of tungsten are critical parameters that depend on the curvature of the band structure. The effective mass can vary based on the specific region of the band structure being analyzed. For calculations involving tungsten, the volume concentration of W-AlN at 300K can be determined using the formula n = (Nc·Nv)1/2exp[-Eg/(2 · kb · T)], where the effective masses of AlN are known (me = 0.4 mo and mh = 3.53 mo) and the energy band gap of AlN is 6.01 eV. Reference material includes the study "Energy band structure and thermo-mechanical properties of tungsten and tungsten carbides" by V.P. Zhukov and V.A. Gubanov.
PREREQUISITES
- Understanding of effective mass in solid-state physics
- Knowledge of band structure analysis
- Familiarity with semiconductor physics, particularly regarding AlN
- Basic grasp of thermodynamic principles related to temperature effects
NEXT STEPS
- Research the band structure of tungsten to determine effective mass values
- Study the LMTO-ASA method for band structure calculations
- Explore the implications of effective mass on semiconductor behavior
- Investigate the thermal properties of tungsten and its alloys
USEFUL FOR
Researchers in solid-state physics, materials scientists, and engineers working with semiconductor materials, particularly those involved in tungsten and aluminum nitride applications.