Properties of Tungsten Nitride: WN Needed

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SUMMARY

The material properties of Tungsten Nitride (WN) are critical for various applications, including semiconductor devices. Key properties include the band gap at 300K, work function, electron and hole mobility, permittivity, thermal conductivity, heat capacity, SRH recombination rates (tau-n and tau-p), density of states for both conduction and valence bands, and Auger coefficients. A recommended resource for obtaining these properties is the study titled "First-principles study of W, WN, WN(2), and WN(3)" by Song and Wang, published in PHYSICA STATUS SOLIDI B in January 2010.

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  • Understanding of semiconductor physics
  • Familiarity with material science concepts
  • Knowledge of first-principles computational methods
  • Experience with properties of materials at the nanoscale
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  • Research the band gap of Tungsten Nitride at 300K
  • Investigate the work function of WN using experimental and theoretical methods
  • Explore electron and hole mobility in semiconductor materials
  • Study the thermal properties of Tungsten Nitride, including thermal conductivity and heat capacity
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Material scientists, semiconductor researchers, and engineers focused on the properties and applications of Tungsten Nitride in electronic devices.

ohopu
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i need the material properties of Tungsten Nitride. Here is a list of properties i need:
1.band gap at 300k
2.work function
3. electron and hole mobility
4. permittivity
5. thermal conductivity
6. heat capacity
7.SRH recombination rates(tau-n and tau-p)
8.density of states(conduction band and valence band)
9.Auger coefficients.

i can't find any of this. please help me out...
 
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This may be a good starting point:

First-principles study of W, WN, WN(2), and WN(3)
Author(s): Song, L (Song, Lu); Wang, YX (Wang, Yuan-Xu)1
Source: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Volume: 247 Issue: 1 Pages: 54-58 DOI: 10.1002/pssb.200945310 Published: JAN 2010
 

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