- #1

MorrowUoN

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## Homework Statement

Calculate the width of the space charge region in a pn junction when a reverse biased voltage is applied. Consider a silicon pn junction at T=300K with doping concentrations of N

_{a}=10^16 cm^-3 and N

_{d}=10^15 cm-3. Assume that N

_{i}=1.5*10^10 cm-3 and V

_{R}=5V

## Homework Equations

W=((2E

_{f}(V

_{bi}+V

_{r})/e)((N

_{a}+N

_{d})/((N

_{a}*N

_{d}))))^1/2

## The Attempt at a Solution

I correctly calculated the in built potential to be 0.635V however, I do not know how to calculate the fermi energy