The depletion region in a semiconductor decreases with increasing doping concentration due to enhanced recombination of charge carriers. When a junction is formed, excess electrons from the n-type material diffuse to the p-type, where they meet holes. Higher doping concentrations increase the likelihood of these electrons encountering holes, leading to a shorter recombination path. The asymmetry of the depletion region arises from differences in effective mass between electrons and holes, affecting their distribution. Understanding these dynamics involves complex mathematical concepts like distribution functions and mean free paths.