SUMMARY
The discussion centers on the safe removal of a 300-micron thick sapphire layer from a Gallium Nitride (GaN) film without causing damage. Participants recommend using Hydrofluoric acid (HF) for wet etching sapphire, although caution is advised as HF can also harm GaN. Alternatives such as ion milling and sodium hydroxide (NaOH) are suggested, with references to potassium hydroxide (KOH) as a potential etchant. Safety measures, including the use of calcium gluconate gel for HF exposure, are emphasized throughout the conversation.
PREREQUISITES
- Understanding of Gallium Nitride (GaN) properties and applications
- Knowledge of chemical etching techniques, specifically Hydrofluoric acid (HF) and its effects
- Familiarity with ion milling processes and their applications in material removal
- Awareness of safety protocols when handling hazardous materials, including the use of calcium gluconate gel
NEXT STEPS
- Research the etching properties of Hydrofluoric acid (HF) on Gallium Nitride (GaN)
- Explore ion milling techniques and their effectiveness in removing sapphire layers
- Investigate the use of sodium hydroxide (NaOH) and potassium hydroxide (KOH) for alumina etching
- Study safety measures and first aid procedures for chemical exposure, particularly with HF
USEFUL FOR
This discussion is beneficial for materials scientists, chemical engineers, and professionals involved in semiconductor fabrication who are looking to optimize the removal of sapphire substrates from Gallium Nitride films safely.