Large signal current gain vs small signal current gain

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SUMMARY

Large signal current gain (hFE) is defined as (IC - ICBO)/(IB + ICBO), while small signal current gain (hfe) is defined as IC/IB. The large signal model is primarily used for biasing arrangements and is non-linear, making it unsuitable for AC analysis due to its assumption of constant VBE. In contrast, the small signal model is a linearized approximation around an operating point, providing results that closely match actual transistor behavior, which is essential for accurate circuit design.

PREREQUISITES
  • Understanding of BJT (Bipolar Junction Transistor) operation
  • Familiarity with AC and DC analysis in electronics
  • Knowledge of linear vs. non-linear models in circuit design
  • Basic grasp of transistor parameters such as IC, IB, and VBE
NEXT STEPS
  • Study the differences between large signal and small signal models in BJTs
  • Learn about the implications of VBE in different operating conditions
  • Explore AC analysis techniques for transistor circuits
  • Investigate linearization methods for non-linear circuit elements
USEFUL FOR

Electronics engineers, circuit designers, and students studying transistor behavior and circuit analysis will benefit from this discussion.

hhi.rabbit
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large signal current gain hFE = (IC - ICBO)/(IB + ICBO)

and small signal current gain hfe = IC/IB

1. what is the difference between these two.
2. why can't we use large signal current gain in small signal currents??
3. i have these notes
on page 57 (page 1 on pdf) paragraph 2 of these (please go through the link)

Notes
A comparison of the simple model
with the iv characteristics of the
BJT shows that our simple largesignal model is very crude and is
not accurate for AC analysis.
The simple model cannot be used to calculate these changes
(It assume vBE is constant!).
how come we have VBE constant in large signal models??
 
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The large signal model is what you use for biasing arrangement, it is non-linear. The small signal model is a linearized approximation around an operating point, and being linear it is much easier to analyze. Mostly, it gives results which agree closely with an actual transistor, so that justifies the model.

2. why can't we use large signal current gain in small signal currents??
Because the calculations won't agree with what you measure on the actual transistor. The closer the model agrees with reality, the better it is and the more accurately we can design circuits.

how come we have VBE constant in large signal models??
I think you are referring to VBE = 0.6v, well, it is a pn junction voltage drop!
 
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thanks :smile:
 

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