Difference between large signal and small signal models

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Discussion Overview

The discussion centers on the differences between large signal and small signal models in bipolar junction transistors (BJTs). Participants seek clarification on the assumptions and concepts underlying each model, particularly in relation to voltage parameters such as vBE, VBE, and vbe. The scope includes theoretical understanding and practical problem-solving approaches.

Discussion Character

  • Exploratory
  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • One participant asks for a clear distinction between large signal and small signal models, specifically regarding the assumptions made in problem-solving.
  • Another participant explains that the difference lies in the size of the signal, suggesting that if the DC component (V1) is much larger than the AC component (V2), the small signal model can be applied.
  • A later reply mentions that in the small-signal model, the base-to-emitter path is represented by a resistance, while in the large-signal model, it is represented as a diode junction with a fixed voltage drop.
  • There is a question about whether vBE equals VBE in the large signal model or vbe in the small signal model, and why VBE is often neglected.
  • Participants discuss the purpose of the two models, with one noting that the large-signal model is used for biasing calculations, while the small-signal model is used for gain calculations at specific frequencies.

Areas of Agreement / Disagreement

Participants express varying levels of understanding and seek clarification on specific aspects of the models. There is no consensus on all points, particularly regarding the treatment of voltage parameters and the assumptions underlying each model.

Contextual Notes

Some participants reference the linearization of nonlinear systems in relation to small-signal analysis, indicating a potential gap in foundational knowledge that may affect the discussion.

Who May Find This Useful

This discussion may be useful for students and practitioners in electronics and electrical engineering who are seeking to understand the application and differences between large signal and small signal models in BJTs.

shawrix
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Please can someone explain the clear concept between large signal model and small signal models in BJT.
Please explain what to assume in large signal and small signals problem solving wise and also the concept.

Amongst vBE, VBE, vbe which is large signal?, small signal? and what we assume in the two models of BJT.

My go:

Is vBE = VBE in large signal model, or is vBE=vbe in small signal model? why do we neglect VBE?

Whats the purpose of two models? Also is BJT at DC equivalent to large signal model?[i know its dumb but you see i need all things cleared]
 
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As you'd expect - the difference is in the signal size.
Consider the case: ##v(t)=V_1+V_2\sin\omega t##

The signal is the ##V_2\sin\omega t## part and it's "size" is ##V_2##.
If ##V_1>>V_2## then you can use the small signal model.

This situation, the voltage ##v(t)\simeq V_1## is approximately DC.

It is useful because it makes the math simple.
 
I did a small post about this not so long ago:
What is small signal AC analysis?

Usually you go through some material on linearization of nonlinear systems before discussing small-signal analysis.
 
shawrix said:
Please can someone explain the clear concept between large signal model and small signal models in BJT.
Please explain what to assume in large signal and small signals problem solving wise and also the concept.

Amongst vBE, VBE, vbe which is large signal?, small signal? and what we assume in the two models of BJT.

My go:

Is vBE = VBE in large signal model, or is vBE=vbe in small signal model? why do we neglect VBE?

Whats the purpose of two models? Also is BJT at DC equivalent to large signal model?[i know its dumb but you see i need all things cleared]
In the small-signal model, the base-to-emitter path is represented by a resistance (of value 0.026β/IE or similar). In the large-signal or DC model, the base-to-emitter path is represented as a diode junction, and this often simply approximated as a fixed voltage drop of about 0.6v. It's the large-signal model that is used to calculate biasing. The small-signal model (available in various complexities) is then used for calculations of gain at frequencies of interest.
 

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