- #1
LtIvan
- 40
- 6
Allo,
Recently, I have been researching RAM, including formats such as DRAM and SRAM.
While I was running simulations on SRAM one week, I realized I could make a 1 bit Static Memory Cell using a simple Schmidt NAND IC.
I ran a draft for it displaying two feed backing NAND gates as inverters, and just one bitline connecting a SPDT to 4.5V and 0V.
I did this as just as an experiment to see if two NAND gates can be used to make a memory cell.
The supply voltage and Vdd is 4.5, (three AA batteries). The IC is 493B Quad Schmidt NAND. The capacitor is used as a safety charge for the CMOS circuitry. the two switches are basic SPDT ones I found lying around. The PCB is a spare Jaycar project I had and is irrelevant to the design.
When SW1 is on and SW2 is connected to 4.5V, you add 1 bit (4.5V) to the the memory cell node. When you turn SW1 off, the NAND node hold 1 bit. The same can be said vice versa when storing 0 bit when SW2 is connected to ground.
In fig.5, the multi-meter measures 4.44V (≈4.5, accepted tolerance of accuracy) across the node between IC1a output and SW2 to ground, when there is 1 bit stored; similar testing has shown 0V when 0bit is stored.
The figures attached show several examples of typical SRAM, (fig.1, fig.2); another figure shows a draft design on AutoCAD, (fig.3); other figures show photos of the actual design.
I'll be soon uploading a PCB design.
Hopefully with this, I could make an array of several memory cells.
Please reply feedback,
Thanks in advance,
Recently, I have been researching RAM, including formats such as DRAM and SRAM.
While I was running simulations on SRAM one week, I realized I could make a 1 bit Static Memory Cell using a simple Schmidt NAND IC.
I ran a draft for it displaying two feed backing NAND gates as inverters, and just one bitline connecting a SPDT to 4.5V and 0V.
I did this as just as an experiment to see if two NAND gates can be used to make a memory cell.
The supply voltage and Vdd is 4.5, (three AA batteries). The IC is 493B Quad Schmidt NAND. The capacitor is used as a safety charge for the CMOS circuitry. the two switches are basic SPDT ones I found lying around. The PCB is a spare Jaycar project I had and is irrelevant to the design.
When SW1 is on and SW2 is connected to 4.5V, you add 1 bit (4.5V) to the the memory cell node. When you turn SW1 off, the NAND node hold 1 bit. The same can be said vice versa when storing 0 bit when SW2 is connected to ground.
In fig.5, the multi-meter measures 4.44V (≈4.5, accepted tolerance of accuracy) across the node between IC1a output and SW2 to ground, when there is 1 bit stored; similar testing has shown 0V when 0bit is stored.
The figures attached show several examples of typical SRAM, (fig.1, fig.2); another figure shows a draft design on AutoCAD, (fig.3); other figures show photos of the actual design.
I'll be soon uploading a PCB design.
Hopefully with this, I could make an array of several memory cells.
Please reply feedback,
Thanks in advance,