Non uniformly distributed p-n junction related problem

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The discussion revolves around solving a problem related to a diffused silicon p-n junction with a linearly graded junction on the p side. The key parameters include a doping concentration of 10^15 cm-3 on the n side and a depletion width of 0.7 micrometers at zero bias. Participants emphasize the need for the slope of the gradient, represented by the parameter 'a', to solve for the total depletion width, built-in potential, and maximum electric field. One user shares their attempt at calculating the built-in potential and discusses the integration of charge density to derive the electric field and potential. The conversation highlights the importance of verifying mathematical approaches and constants used in the calculations.
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Hello guys, I stumbled upon this problem while studying non uniformly distributed pn junctions and finding difficulty solving this. Any help will be greatly appreciated.

A diffused silicon p-n junction has a linearly graded junction on the p side with a = 2 x10^19 cm-4, and a uniform doping of 10^15 cm-3 on the n side. If the depletion width on the p side is 0.7 micro meter at zero bias, find the total depletion width, built-in potential, and maximum electric field at zero bias.
 
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This is a fairly standard homework question. What have you tried? Did you find this in a textbook? Was there a figure that gave the slope of the gradient? Usually to solve it one needs the slope of the gradient like in this question.
https://www.chegg.com/homework-help/questions-and-answers/3-15p--diffused-silicon-p-n-junction-linearly-graded-junction-p-side-na-ax-x-distance-10-1-q20562763
 
eq1 said:
This is a fairly standard homework question. What have you tried? Did you find this in a textbook? Was there a figure that gave the slope of the gradient? Usually to solve it one needs the slope of the gradient like in this question.
https://www.chegg.com/homework-help/questions-and-answers/3-15p--diffused-silicon-p-n-junction-linearly-graded-junction-p-side-na-ax-x-distance-10-1-q20562763

Thanks eq1 for your reply. I tried to solve the built in potential part, though not sure if it's the correct approach. The gradient is given in the question as the parameter 'a' . the problem is from Neamen's semiconductor physics and devices exercise. I attached the photos of my solution. Please share your valuable thoughts on this.
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I didn't understand the first two images, but the third looks like it has the correct approach; rho (charge density) is modified to include the ax term (it has a linear dependency and is not just a constant), then integrate charge to get the E-field and integrate that to get the built-in potential. I haven't checked the math or the constants you plugged in though. (The obvious thing is there needs to be an x^2 term in E-field which I saw, so I suspect it's ok)
 
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