# QM - Etop of electron distribution of a semiconductor

1. Nov 14, 2009

### f_xer

1. The problem statement, all variables and given/known data

I'm trying to find energy level above Ec where electron distribution makes a peak for a nondegenerate semiconductor. For this case we may take GaAs having Eg = 1.42eV at T = 300K.

2. Relevant equations
$$m_e$$=single isotrophic effective mass or $$m_0$$
energy states, $$g_{c}(E) = \frac{m_{e}\ast\sqrt{2m_{e}(E-E_{c})}}{pi^2 * hbar^3}$$
fermi function for a nondegenerate semiconductor, $$f(E) = exp((E_f-E)/kT)$$
electron distribution, $$n=N_{c}*exp((Ef-Ec)/kT)$$ and $$N_{c}=4.21\ast10^{17} cm^-3$$

3. The attempt at a solution
I think I'll give a fermi energy level equal to 3kT above Ec where semi.con. is still nondegenerate. Then I'll calculate n. Afterwards I'll equate n to $$\int g_{c}(E)*f(E)*dE$$ taking a limit to 99 % of n. By that I intend to find top limit of the integral which must be the Etop.
But i do not how to evaluate a integral such as $$\sqrt{E}*exp(c*E)$$
ps: partial integral is not working.
Is there another {easy :( }approach?

2. Nov 17, 2009

### f_xer

$$g_{c}(E) * f(E)$$
one of them is $$E_{c}$$ and the other is $$E_{top}$$ which is asked by the question ;)