Pieter Kuiper said:
So an electric field accelerates electrons into states with higher momentum, but this acceleration does not contnue indefinitely. It is limited by inelastic scattering. After some relaxation time \tau the momentum distribution is reset to be centered around zero.
Now, again there is a a reference to the relaxation time, a convenient explanation, with some physical basis because it is easy to solve. If you do the problem correctly, you don't need the relaxation time. Calculations have been done to higher order obtaining better results. For n-type materials, the explanations are correct as given, technically they could be better. In the conduction band, if your band structure is calculated correctly, there should be some interaction between the conduction and valence bands and the wave function for the electron would indicate this. Scattering cross sections would not only depend on the angle between the incident and scattered \vec{k} vectors but their orientation relative to the Brillouin Zone. In the relaxation-time approximation, the scattering is assumed to be isotropic and the scattering rates depend only on the angle between the two vectors. Sadly, for many n-type materials, this is ignored, the Fermi surface, or surface of constant energy, is spherical or nearly spherical so the essential physics is ignored. In silicon and germanium, the conduction band is not parbolic, but slightly non-parabolic, people ignore this and do the first order calculation, it may be good enough, but it isn't completely correct.
If the problem is electronic transport o in the valence band or in hole transport, the situation becomes much much more complicated. Not only is the conduction band taken into account, but the heavy, light and spin orbit bands. Each are non-parabolic and highly anisotropic in nature. For any point away from the very center of the Brillouin zone, the wave functions for the valence bands are a combination of the valence band wave functions at the center. Again, scattering is not isotropic, but very anisotropic in nature. There are more bands to worry about and there is scattering between the valcence bands further complicationg things. The best way to calculate the transport coefficients is by expanding the scattering rates in terms of products of spherical harmonics, then the Boltzmann Equation can be converted from a intego-differential equation into a matrix equation. The transport coefficients are then found quite easily, the lowest order angular momenta pair of harmonics then gives the relaxation time approximation scattering rate.
As you can see, the relaxation time approximation can give you a 90-95% solution and in some cases, that is good enough. If not, this other formalism must be employed and then complete characterization of the material can be accomplished. This has been done for silicon as I have said before, this hasn't been done for any of the other semiconductors.
Zapper, you referred to a Monte Carlo calculation in your past. Nothing personal, all in jest, I know you have your reservations now as do many others in the community.