Question in small signal model for NMOS

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The discussion revolves around designing a common source NMOS circuit using the IRFP244 MOSFET, with specific parameters for gain and input voltage. The user initially calculated resistor values R1 and R2 to achieve a small signal output gain of approximately 5, but encountered issues with the input voltage affecting the MOSFET operation. Clarifications were provided regarding the calculations for drain current (ID) and the influence of input voltage on the MOSFET's cutoff behavior. Suggestions included adjusting resistor values for higher current levels and ensuring correct calculations when varying input voltages. The conversation emphasizes the importance of selecting resistor values based on desired power levels and voltage gain.
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Homework Statement


Design the following circuit, common source with source resistance, in fig. (1). It uses the MOSFET (irfp244) where Vt= 4.15V, KN = Kn(W/L)= 2.87 A/V2. Assume vin = +/- 100 mV, DC offset = 5 V, and the frequency = 1 K Hz.
a) Design R1 and R2 so that the small signal output gain, Av, is ~ 5. Assume 1/gm << R2.
b) What is the value of ID?
c) Plot Vout & Vin when vin = +/- 400 mV, +/- 700 mV, and +/- 1V separately.
d) Explain why the small signal gain collapses as the input is increased.

Homework Equations


Id = (1/2) KN (VGS - Vt)2
Id = Vsource / R2 , Id = (10-Vout) / R1 , Av = Vo/Vin = R1 /((1/gm)+R2)

The Attempt at a Solution


Now what I did I assumed that from Av = R1/R2 =5 that R1=250ohm and R2=50ohm I found from Id = (1/2) KN (VGS - Vt)2 & Id = Vsource / R2 that Vs = 0.96599V or Vs = 0.74794V the first Vs is not accepted because the N-MOSFET will be off (Vgs > Vt) and the second will be on ( VG-Vg swing - Vs > Vt) . and the value for Id will be 14.9588 mA . but the problem is changing the Vin ! because the mosfet will be cut off from (Vg - Vg swing - Vs < Vt) but the multisim still give me value for Vout and Vin for different Av , Can anyone tell me what i did wrong ?
 

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EDIT: Oops, you're OK for zero input volts (in addition to the 5V bias of course)!

Your equations are all good. The given input offset voltage is only 5V which isn't much above Vt for this device.

But, OK. If you go with R2 = 50 ohms then your Vs and i are correct. But, when Vin = 4.9V I got i = 0.013A with Vs = 0.013*50 = 0.65V. The device is not cut off at 4.9V input. I suggest you made a math boo-boo when putting Vin = +4.90V.

Of course, as you drop Vin below 4.9V it eventually will cut off.

P.S. You could have gone to smaller R2, then R1 still = 5R2 of course and the current levels could have been much higher, as intended by this power transistor.
 
Last edited:
is there a way to find R1 and R2 other than assumption ?
 
mrxxdragonxx said:
is there a way to find R1 and R2 other than assumption ?

You choose R1 and R2 to give you the power level and voltage gain you want. Two requirements, two resistors to select.

Usually though one of them is given (like a heater load or whatever).
 

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