Relative permittivity of a semiconductor material

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SUMMARY

The forum discussion centers on the measurement of the relative permittivity of a p-type semiconductor material, specifically a metal phthalocyanine, using a metal-semiconductor-metal (M-S-M) structure. The capacitance was measured with an LCR meter at 1 kHz, yielding a calculated relative permittivity (ε_r) of approximately 0.000035, which is significantly lower than the expected value of 1. Participants express skepticism regarding the accuracy of the LCR meter and question the validity of the M-S-M structure's assumption as a parallel plate capacitor, as well as the interface characteristics between the metal and semiconductor.

PREREQUISITES
  • Understanding of semiconductor physics, particularly p-type materials
  • Familiarity with capacitance measurement techniques using LCR meters
  • Knowledge of metal-semiconductor-metal (M-S-M) structures
  • Basic principles of parallel plate capacitor behavior
NEXT STEPS
  • Investigate the calibration and functionality of LCR meters for accurate capacitance measurements
  • Research the electrical characteristics of metal-semiconductor interfaces, including built-in potentials
  • Explore the theoretical foundations of relative permittivity in semiconductor materials
  • Examine the implications of using M-S-M structures in capacitance measurements
USEFUL FOR

This discussion is beneficial for physicists, materials scientists, and electrical engineers involved in semiconductor research and characterization, particularly those focused on capacitance measurement techniques and material properties analysis.

r.sahebi
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http://physics.stackexchange.com/questions/156708/can-the-relative-permittivity-of-a-semiconductor-material-be-lower-than-1

To measure the relative permittivity of a p-type semiconductor material (a metal phthalocyanine ) , a M-S-M structure was made by thermal evaporation method. The capacitance was measured by a LCR meter at room temperature under the frequency of 1 kHz and the thickness of semiconductor layer and active area of our sample were known .{ C=ε_r ε0 A/d }this equation was used to calculate the ε_r.

but the calculated value was lower than one! about 0.000035

I think that our LCR meter must be defective.

what do you think?
 
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Its almost definitely higher than 1. How valid is the assumption that the M-S-M structure behaves like a parallel plate capacitor? How does the I-V characteristic of the device look? What do you know about the interface between the metal and the semiconductor i.e. are the built in potentials?
 

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