Hello! Is there a difference between satutation and pinch off in nmos transistors? Because my research in the internet for Mosfet pinch off leave me think that there is no difference between the two. Which confuses me, because pinch off means that there is no current at all, and saturation means that there is, but it has reached its maximum value. Also i dont think i fully understand the process of pinch off in enhancement mosfets. My understanding is that once the inversion layer is formed and a voltage is applied between the drain and the source, current start flowing. If we increase Vds too much, the strong electric field of the drain began to sink electrons from the chanel and it shrinks. If we increase it even more, the drain sinks so much electrons that basicaly a depletion layer is formed. Is that correct? Also how to determine at what value of Vds pinch off will occure?
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