SUMMARY
The discussion focuses on calculating the width of the space charge region in a silicon pn junction under reverse bias conditions. Given the parameters of Na=1016 cm-3, Nd=1015 cm-3, intrinsic carrier concentration Ni=1.5*1010 cm-3, and reverse voltage VR=5V, the built-in potential was calculated to be 0.635V. The formula used for calculating the width is W=((2Ef(Vbi+Vr)/e)((Na+Nd)/((Na*Nd))))^1/2. Clarifications were made regarding the non-involvement of Fermi energy in the calculation and the identification of epsilon as the permittivity of the material.
PREREQUISITES
- Understanding of pn junction theory
- Familiarity with semiconductor physics at T=300K
- Knowledge of built-in potential calculations
- Basic understanding of permittivity in materials
NEXT STEPS
- Study the derivation of the space charge width formula in pn junctions
- Learn about the impact of doping concentrations on junction characteristics
- Explore the role of permittivity in semiconductor devices
- Investigate the effects of reverse bias on pn junction behavior
USEFUL FOR
Students and professionals in electrical engineering, particularly those focusing on semiconductor devices and pn junction analysis.
