johndoe
- 41
- 0
What is stack effect in cmos design and how would it affect the threshold voltages?
The discussion centers around the concept of stack effect in CMOS design, particularly its impact on threshold voltages in the context of stacked NMOS transistors. Participants explore how the arrangement of transistors affects their electrical characteristics, especially during operation in circuits like NAND gates.
Participants express uncertainty about the conditions under which the stack effect influences threshold voltages, with no consensus reached on the specifics of its impact in different operational states.
Participants do not fully explore the implications of body effect or other factors that may influence threshold voltage beyond the immediate discussion of the stack effect.
This discussion may be useful for individuals interested in CMOS design, particularly those studying the effects of transistor stacking on circuit performance and threshold voltage behavior.
es1 said:This sounds somewhat like a HW question.
A "stack" is just two or more transistors in series. So think of a standard CMOS inverter but with two NMOS gates in series on the bottom half. Can you determine how doing that would effect the threshold of each transistor? Pay close attention to Vsb.
johndoe said:Ok with two nmos in series, assuming their body is both grounded, Vt of the top nmos would increase since when a gate voltage is applied to the bot nmos, the source voltage (Vs) of the top nmos will be at a voltage Vgs higher than its body.
But here comes the question, such a 'stack effect' with the increase in Vt of the first nmos would only happen when the bot nmos is turned on right?
berkeman said:What is the context of your question? What is the application?