Designing Photonic Integrated Circuit: Photodiode to CMOS

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Discussion Overview

The discussion revolves around the design of a photonic integrated circuit intended to replace the global interconnect layer of a large-scale integration (LSI) system. Participants explore the output requirements of a photodiode, the necessity of impedance matching, and the potential use of CMOS inverters and transimpedance amplifiers (TIAs) in the circuit design.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant questions the required voltage output of the photodiode, suggesting that the voltage swing for driving a 32 nm CMOS inverter might be higher than the 200 mV mentioned by another.
  • Another participant states that the required voltage output depends on the supply voltage for the inverter, indicating that for a 5V supply, a high signal is typically between 3.5V to 5V.
  • There is a suggestion to use an analog comparator before the inverter to improve performance.
  • One participant argues that impedance matching is not necessary unless the signal is RF, and suggests that for signals below 10 MHz, it may not be a concern.
  • Another participant emphasizes the importance of using an actual TIA for better performance instead of relying on a CMOS inverter, which they describe as a poor TIA.
  • There is a clarification that the "required" voltage output of the photodiode is related to the turn-on voltage of the diode, as the signal is primarily a current.
  • A humorous remark is made about the long-standing challenge of integrating photonic circuits into electronics, with one participant noting that it has been a goal for at least 40 years.

Areas of Agreement / Disagreement

Participants express differing views on the voltage requirements for the photodiode and the necessity of impedance matching. There is no consensus on the optimal design approach, with some advocating for the use of TIAs while others suggest alternative methods.

Contextual Notes

Participants have not fully resolved the assumptions regarding voltage output requirements and the implications of using different circuit components, such as TIAs versus CMOS inverters.

BenKOTI
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I am now trying to design a photonic integrated circuit which will be used to replace the global interconnect layer of a LSI. I need to somehow take the output of a photodiode w/o TIA (10G signal perhaps) and then transmit that signal to other layer of the LSI by TSV or something. Assume a connection between photodiode and a CMOS inverter.

(1) What is the required voltage output of the photodiode. I have heard from someone that the required voltage swing for driving an inverter in 32 nm node is 200 mV, is that true? I thought it would be higher.
(2)Is it necessary to realize impedance matching in this kind of design?
 
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(1) Depends entirely on the supply voltage for the inverter you're using. For a 5V supply, conventionally 3.5V to 5V is recognized as "high" and 0V to 1.5V is recognized as "low". If possible, it may make sense to introduce an analog comparator before the inverter.

(2) Not unless the signal is RF. If it's short of 10MHz at the photodiode, I wouldn't bother.
 
BenKOTI said:
I am now trying to design a photonic integrated circuit which will be used to replace the global interconnect layer of a LSI.

That has been one of the holy grails of the electronics industry for at least 20 years now. If you can solve it, you'll be rich beyond your wildest imagination! I'm surprised you would have to ask our opinion here...

BenKOTI said:
I need to somehow take the output of a photodiode w/o TIA (10G signal perhaps) and then transmit that signal to other layer of the LSI by TSV or something. Assume a connection between photodiode and a CMOS inverter.

In your scenario you would be using the CMOS inverter as a (poor) TIA. But I'm assuming you know that. Why not use an actual TIA and get *much* better performance? You can use the output of the TIA to drive an inverter, but then you'd be using the inverter as a (poor) limiter. But I'm assuming you know that. Why not use an actual limiter circuit? You can make those (and many are made) in CMOS, you know. Do you know how analog front ends for optical communications transceivers are designed? They evolved the way they did for a reason.

BenKOTI said:
(1) What is the required voltage output of the photodiode. I have heard from someone that the required voltage swing for driving an inverter in 32 nm node is 200 mV, is that true? I thought it would be higher.

Do you know how a diode works? The "required" voltage output is just the turn-on voltage of the diode, as the signal is a current.

BenKOTI said:
(2)Is it necessary to realize impedance matching in this kind of design?

What?
 
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analogdesign said:
That has been one of the holy grails of the electronics industry for at least 20 years now.
More like 40 years. :approve:
 
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